Download SOT-23 Plastic-Encapsulate Transistors MMBT3904

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT3904
TRANSISTOR (NPN)
SOT–23
FEATURES
z Complementary to MMBT3906
MARKING:1AM
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
200
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
TOPR
Operating Temperature
0～+70
℃
1. BASE
2. EMITTER
3. COLLECTOR
BDTIC
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICEX
VCE=30V, VEB(off)=3V
50
nA
Collector cut-off current
ICBO
VCB= 60V, IE=0
100
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
100
nA
hFE(1)
VCE=1V, IC=10mA
100
hFE(2)
VCE=1V, IC=50mA
60
hFE(3)
VCE=1V, IC=100mA
30
Collector-emitter saturation voltage
VCE(sat)
IC=50mA, IB=5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=50mA, IB=5mA
0.95
V
DC current gain
Transition frequency
fT
Delay time
td
Rise time
tr
Storage time
ts
Fall time
tf
VCE=20V,IC=10mA, f=100MHz
300
300
MHz
VCC=3V, VBE(off)=-0.5V IC=10mA,
35
ns
35
ns
VCC=3V, IC=10mA, IB1= IB2=1mA
200
ns
VCC=3V, IC=10mA, IB1= IB2=1mA
50
ns
IB1=1mA
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
CLASSIFICATION OF hFE(1)
HFE
100-300
RANK
L
H
RANGE
100–200
200–300
www.BDTIC.com/jcst
Typical Characterisitics
Static Characteristic
400uA
DC CURRENT GAIN
COLLECTOR CURRENT
350uA
60
300uA
250uA
200uA
40
——
IC
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
hFE
80
hFE
400
500uA
450uA
IC
(mA)
100
MMBT3904
150uA
Ta=100℃
300
Ta=25℃
200
100
100uA
20
IB=50uA
0
0.1
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
600
——
VCE
20
1
0.3
IC
VBEsat
1.2
30
10
3
COLLECTOR CURRENT
(V)
IC
100
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
Ta=100℃
100
Ta=25℃
30
Ta=25℃
0.8
Ta=100℃
0.4
β=10
β=10
10
0.0
1
10
3
COLLECTOR CURRENT
IC
100
100
30
IC
200
1
10
3
(mA)
100
30
COLLECTOR CURRENT
—— VBE
Cob/ Cib
9
——
IC
VCB/ VEB
f=1MHz
IE=0/IC=0
Ta=25℃
30
Cib
(pF)
Ta=100℃
C
10
CAPACITANCE
IC
(mA)
COMMON EMITTER
VCE=1V
COLLECTOR CURRENT
300
(mA)
3
Ta=25℃
1
3
Cob
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1
0.1
1.2
fT
300
1
0.3
—— IC
PC
250
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
——
V
20
(V)
Ta
VCE=20V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
200
100
200
150
100
50
0
1
3
www.BDTIC.com/jcst
10
COLLECTOR CURRENT
30
IC
(mA)
60
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
Related documents