Download TO-251-3L Plastic-Encapsulate Transistors MJD41C JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD41C
TRANSISTOR (NPN)
TO-251-3L
FEATURES
z
Designed for General Purpose Amplifier and Low Speed
S witching Applications.
z
Lead Formed for Surface Mount Applications in Plastic
Sleeves (No Suffix)
z
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
z
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
z
Electrically Similar to Popular TIP41 and TIP42 Series
z
Monolithic Construction With Built–in Base–Emitter Resistors
1.BASE
2.COLLECTOR
3.EMITTER
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
6
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
100
V
Collector-emitter breakdown voltage
VCEO(sus)
IC=30mA,IB=0
100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICEO
VCB=60V,IE=0
50
μA
Emitter cut-off current
IEBO
VEB=5V IC=0
0.5
mA
hFE(1)
VCE=4V IC=0.3A
30
hFE(2)
VCE=4V,IC=3A
15
VCE(sat)
IC=6A,IB=0.6A
1.5
V
Base-emitter voltage
VBE
VCE=4V,IC=6A
2
V
Transition frequency
fT
DC current gain
Collector-emitter saturation voltage
VCE=10V,IC=500mA,f=1MHz
www.BDTIC.com/jcst
3
75
MHz
Typical Characterisitics
Static Characteristic
4000
IC
hFE
40mA
35mA
30mA
2000
IC
25mA
1500
20mA
15mA
1000
Ta=100℃
100
DC CURRENT GAIN
(mA)
45mA
2500
——
COMMON
EMITTER
Ta=25℃
50mA
3000
hFE
200
3500
COLLECTOR CURRENT
MJD41C
Ta=25℃
10mA
500
COMMON EMITTER
VCE=4V
IB=5mA
0
0
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE
VCEsat
1
——
8
VCE
9
10
0.1
10
1
10
100
COLLECTOR CURRENT
(V)
IC
VBEsat
1.2
6000
1000
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BDTIC
0.1
Ta=100℃
Ta=25℃
1.0
0.8
Ta=25℃
0.6
Ta=100℃
0.4
β=10
0.01
0.1
1
10
100
COLLECTOR CURRENT
IC
6000
——
1000
IC
β=10
0.2
0.1
6000
1
10
100
COLLECTOR CURRENT
(mA)
VBE
COMMON EMITTER
VCE=4V
f=1MHz
IE=0/IC=0
1000
Ta=25℃
(pF)
(mA)
Cib
1000
T=
a 25
℃
10
CAPACITANCE
C
100
T=
a 10
0℃
IC
COLLCETOR CURRENT
6000
(mA)
—— VCB/ VEB
Cob/ Cib
10000
IC
1000
100
Cob
1
0.1
0.2
0.4
0.6
0.8
BASE-EMMITER VOLTAGE
fT
100
——
1.0
VBE
10
0.1
1.2
1
10
REVERSE VOLTAGE
(V)
IC
PC
2500
——
V
20
(V)
Ta
VCE=10V
COLLECTOR POWER DISSIPATION
PC (mW)
TRANSITION FREQUENCY
fT
(MHz)
Ta=25℃
10
1
50
2000
1500
1000
500
0
100
www.BDTIC.com/jcst
COLLECTOR CURRENT
1000
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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