Download TO-252-2L Plastic-Encapsulate Transistors MJD3055 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
MJD3055
TRANSISTOR
(NPN)
TO-252-2L
FEATURES
z
Designed for General Purpose Amplifier and Low Speed
Switching
Applications
1.BASE
2.COLLECTOR
z
Electrically Simiar to MJE3055
z
DC Current Gain Specified to10 Amperes
3.EMITTER
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
10
A
Collector Power Dissipation
1.25
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=1mA,IE=0
70
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=200 mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA,IC=0
5
V
ICBO
VCB=70V,IE=0
0.02
mA
ICEO
VCB=30V,IB=0
50
µA
IEBO
VEB=5V,IC=0
0.5
mA
hFE(1)
VCE=4V,IC=4A
20
hFE(2)
VCE=4V,IC=10A
5
VCE(sat)(1)
IC=4A, IB=0.4A
1.1
V
VCE(sat)(2)
IC=10A, IB=3.3A
8
V
1.8
V
Collector cut-off current
Emitter cut-off current
100
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
VBE
Transition frequency
fT
VCE=4V, IC=4A
VCE=10V,IC=0.5A,f=500KHZ
www.BDTIC.com/jcst
2
MHz
Typical Characteristics
MJD3055
Static Characteristic
COMMON EMITTER
VCE=4V
60mA
Ta=100℃
hFE
IC
54mA
4
48mA
DC CURRENT GAIN
COLLECTOR CURRENT
—— IC
COMMON EMITTER
Ta=25℃
5
(A)
hFE
1000
6
42mA
3
36mA
2
24mA
30mA
18mA
1
100
Ta=25℃
10
12mA
IB=6mA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCEsat
1.6
——
VCE
1
0.1
6
1
(V)
10
COLLECTOR CURRENT
VBEsat
IC
——
IC
(A)
IC
1.8
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=3,Ta=100℃
1.5
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
1.2
β=10,Ta=100℃
β=3,Ta=25℃
0.8
0.4
0.0
β=10,Ta=25℃
0.3
1
IC
1
fT
20
(MHz)
(A)
0.3
IC
TRANSITION FREQUENCY
Ta=25℃
1
0.1
100
IC
18
16
14
12
100
200
BASE-EMMITER VOLTAGE VBE (mV)
——
(A)
10
3000
1000
Cob/ Cib
——
IC
fT
Ta=100℃
1000
10
COLLECTOR CURRENT
COMMON EMITTER
VCE=4V
COLLECTOR CURRENT
Ta=100℃
0.6
(A)
IC —— VBE
10
Ta=25℃
0.9
0.0
0.1
10
COLLECTOR CURRENT
1.2
300
400
COLLECTOR CURRENT
VCB/ VEB
PC
1.5
——
IC
500
600
(mA)
Ta
f=1MHz
IE=0/ IC=0
(pF)
100
C
CAPACITANCE
COLLECTOR POWER DISSIPATION
Pc (W)
Ta=25℃
Cib
Cob
10
1
0.5
1
1.0
0.5
0.0
www.BDTIC.com/jcst
10
REVERSE VOLTAGE
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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