Download SOT-23 Plastic-Encapsulate Transistors M8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
M8050
SOT-23
TRANSISTOR (NPN)
FEATURES
Power dissipation
1. BASE
2. EMITTER
MARKING: Y11
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.8
A
Collector Power Dissipation
0.2
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 35V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE= 20V, IB=0
0.1
μA
hFE(1)
VCE=1V, IC=5mA
45
hFE(2)
VCE=1V, IC=100mA
80
hFE(3)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
DC current gain
Transition frequency
fT
VCE=6V, IC= 20mA , f=30MHz
400
150
MHz
* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.
CLASSIFICATION OF hFE(2)
Rank
Range
L
H
80-300
300-400
www.BDTIC.com/jcst
B,Jun,2011
Typical Characteristics
Static Characteristic
400
COMMON
EMITTER
Ta=25℃
hFE
640uA
560uA
480uA
200
IC
——
Ta=100℃
DC CURRENT GAIN
(mA)
720uA
IC
COLLECTOR CURRENT
hFE
1000
800uA
300
M8050
400uA
320uA
Ta=25℃
100
240uA
100
160uA
COMMON EMITTER
VCE=1V
IB=80uA
0
10
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VCE
5
1
10
100
COLLECTOR CURRENT
(V)
VBEsat ——
(mA)
IC
1200
1000
1000
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
100
Ta=100℃
Ta
10
1
1
10
100
COLLECTOR CURRENT
Cob / Cib
100
——
IC
800
Ta=25℃
600
Ta=100℃
400
200
0.1
1000
VCB / VEB
10
fT
1000
100
——
IC
1000
(mA)
IC
(MHz)
Ta=25℃
C
TRANSITION FREQUENCY
(pF)
fT
Cib
1
COLLECTOR CURRENT
(mA)
f=1MHz
IE=0 / IC=0
CAPACITANCE
1000
10
Cob
100
VCE=6V
Ta=25℃
1
0.1
1
10
REVERSE BIAS VOLTAGE
PC
COLLECTOR POWER DISSIPATION
PC (mW)
250
——
V
20
(V)
10
1
40
10
COLLECTOR CURRENT
IC
(mA)
Ta
200
150
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Jun,2011