Download SOT-323 Plastic-Encapsulate Transistors KTC4077

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
KTC4077
TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Complementary to KTA2017
z High Voltage
z Excellent hFE Linearity
z Low Noise
SOT–323
APPLICATIONS
z General Purpose Amplification
1. BASE
2. EMITTER
3. COLLECTOR
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
100
mA
IB
Base Current
20
mA
PC
Collector Power Dissipation
100
mW
Thermal Resistance from Junction to Ambient
1250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=120V, IE=0
100
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
100
nA
DC current gain
hFE
VCE=6V, IC=2mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
Collector output capacitance
Cob
Noise Figure
NF
200
700
IC=10mA, IB=1mA
0.3
VCE=6V, IC=1mA
VCB=10V, IE=0, f=1MHz
VCE=6V,
IC=0.1mA,f=1kHz,
Rg=10kΩ
CLASSIFICATION OF hFE
RANK
GR
BL
RANGE
200-400
350-700
MARKING
DGR
DBL
www.BDTIC.com/jcst
V
100
MHz
4
pF
10
dB
Typical Characteristics
KTC4077
Static Characteristic
COMMON EMITTER
VCE= 6V
——
IC
Ta=100℃
30uA
hFE
(mA)
COMMON
EMITTER
Ta=25℃
8
24uA
6
21uA
18uA
4
Ta=25℃
DC CURRENT GAIN
IC
27uA
COLLECTOR CURRENT
hFE
1000
10
15uA
12uA
100
9uA
2
6uA
IB=3uA
0
10
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
6
7
1
10
COLLECTOR CURRENT
VCE (V)
VCEsat
IC
IC
——
100
(mA)
IC
300
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
800
Ta=25℃
600
Ta=100 ℃
400
200
0
0.1
1
10
COLLECTOR CURREMT
IC
100
——
IC
100
Ta=100 ℃
Ta=25℃
10
1
0.1
100
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
1000
IC
Ta=25℃
T =2
5℃
a
TRANSITION FREQUENCY
10
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
100
(mA)
COMMON EMITTER
VCE=6V
(MHz)
COMMON EMITTER
VCE=6V
——
IC
1
0.1
0
200
400
600
800
100
10
0.1
1000
1
Cob/Cib
——
VCB/VEB
f=1MHz
IE=0/IC=0
Ta=25 ℃
10
CAPACITANCE
C
(pF)
Cib
Cob
1
0.1
0.1
PC
150
COLLECTOR POWER DISSIPATION
PC (mW)
100
8.5
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
IC
(mA)
Ta
100
50
0
1
www.BDTIC.com/jcst
REVERSE VOLTAGE
10
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150