Download SOT-23 Plastic-Encapsulate Transistors M28S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
M28S
TRANSISTOR (NPN)
SOT–23
FEATURES
 Excellent hFE Linearity
 High DC Current Gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
1. BASE
Value
Unit
40
V
20
V
2. EMITTER
3. COLLECTOR
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
BDTIC
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=0.1mA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA, IC=0
6
V
Collector cut-off current
ICBO
VCB=35V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=20V, IB=0
5
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC=1mA
290
hFE(2)
VCE=1V, IC=100mA
300
hFE(3)
VCE=1V, IC=300mA
300
hFE(4)
VCE=1V, IC=500mA
300
DC current gain
Collector-emitter saturation voltage
VCE(sat)
fT
Transition frequency
Collector output capacitance
Cob
1000
IC=600mA, IB=20mA
0.55
VCE=10V,IE=50mA, f=1MHz
100
VCB=10V, IE=0, f=1MHz
MHz
9
pF
CLASSIFICATION OF hFE(2)
RANK
B
C
D
RANGE
300–550
500–700
650–1000
MARKING
28S
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V
Typical Characterisitics
M28S
Static Characteristic
hFE
160
hFE
180uA
120
140uA
100
120uA
80
100uA
60
80uA
60uA
40
Ta=100℃
1000
DC CURRENT GAIN
160uA
IC
(mA)
COMMON
EMITTER
Ta=25℃
200uA
140
COLLECTOR CURRENT
IC
——
2000
Ta=25℃
40uA
20
IB=20uA
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
VCE
1
10
100
COLLECTOR CURRENT
(V)
IC
——
VCE=1V
100
5
VBEsat
2000
IC
1000
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
100
Ta=100℃
Ta=25℃
10
1
10
100
COLLECTOR CURRENT
VBE
1000
IC
Ta=25℃
Ta=100℃
β=30
β=30
1
1000
100
1000
1
10
(mA)
100
COLLECTOR CURRENT
—— IC
Cob/ Cib
1000
IC
1000
(mA)
—— VCB/ VEB
f=1MHz
IE=0/IC=0
(pF)
CAPACITANCE
COLLCETOR CURRENT
10
Ta=25℃
VCE=1V
0.3
0.4
0.5
0.6
0.7
BASE-EMMITER VOLTAGE
fT
——
VBE
0.8
0.9
10
Cob
1
0.1
1.0
1
(V)
10
REVERSE VOLTAGE
IC
PC
250
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
1000
fT
Cib
1
0.1
0.2
TRANSITION FREQUENCY
100
C
Ta=100℃
IC
(mA)
Ta=25℃
100
100
10
——
V
20
(V)
Ta
200
150
100
50
VCE=10V
Ta=25℃
1
0
1
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10
COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150