Download SOT-23 Plastic-Encapsulate Transistors KTC3265

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC3265
SOT-23
TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
z
z
3. COLLECTOR
High DC current gain
Complementary to KTA1298
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
800
mA
PC
Collector Power Dissipation
200
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=30 V, IE=0
0.1
μA
Collector cut-off current
IEBO
VEB=5 V, IC=0
0.1
μA
DC current gain
hFE
VCE=1V, IC= 100mA
Collector-emitter saturation voltage
VBE
Transition frequency
fT
Collector output capacitance
VCE=1V,IC=10mA
0.5
VCE=5V, IC=10mA
f=100MHz
Cob
320
IC=500mA, IB=20mA
VCE(sat)
base-emitter voltage
100
VCB=10V,IE=0,f=1MHZ
Range
Marking
0.8
V
MHz
13
pF
O
Y
100-200
160-320
EO
EY
www.BDTIC.com/jcst
V
120
CLASSIFICATION OF hFE
Rank
0.5
Typical Characterisitics
Static Characteristic
160
COMMON
EMITTER
Ta=25℃
hFE
400uA
DC CURRENT GAIN
(mA)
450uA
350uA
300uA
80
250uA
200uA
150uA
40
——
IC
Ta=100℃
120
IC
hFE
400
500uA
COLLECTOR CURRENT
KTC3265
300
Ta=25℃
200
100
100uA
COMMON EMITTER
VCE=1V
IB=50uA
0
0
0.0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
600
——
VCE
2.5
1
10
3
IC
VBEsat
1.2
300
100
30
COLLECTOR CURRENT
(V)
IC
800
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
Ta=100℃
100
Ta=25℃
30
Ta=25℃
0.8
Ta=100℃
0.4
β=25
β=25
10
0.0
1
10
3
COLLECTOR CURRENT
IC
800
300
100
30
IC
1
800
10
3
(mA)
COLLECTOR CURRENT
—— VBE
Cob/ Cib
100
——
300
IC
300
800
(mA)
VCB/ VEB
Cib
(mA)
Ta=100℃
(pF)
30
C
100
30
CAPACITANCE
IC
COLLECTOR CURRENT
100
30
Ta=25℃
10
10
Cob
3
f=1MHz
IE=0/IC=0
3
COMMON EMITTER
VCE=1V
1
0.2
0.4
0.6
0.8
1.0
Ta=25℃
1
0.1
1.2
fT
400
1
0.3
—— IC
PC
250
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
——
V
20
(V)
Ta
VCE=5V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
200
100
5
200
150
100
50
0
10
www.BDTIC.com/jcst
100
30
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150