Download TO-92 Plastic-Encapsulate Transistors KTC3203

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTC3203
TRANSISTOR (NPN)
TO-92
FEATURES
z
Complementary to KTA1271
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
800
mA
Collector Power Dissipation
625
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
BDTIC
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC = 0.1mA, IB=0
35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 0.1mA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 35V ,
IE=0
0.1
μA
Collector cut-off current
ICEO
VCE= 25V ,
IB=0
0.2
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 100mA
100
hFE(2)
VCE=1V, IC= 700mA
35
320
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC= 500 mA, IB= 20mA
0.5
V
0.8
V
Base-emitter voltage
VBE
VCE= 1V, IC= 10mA
Transition frequency
fT
VCE= 5 V, IC= 10mA
120
MHz
Collector Output Capacitance
Cob
VCB=10V,IE= 0,f=1MHz
13
pF
CLASSIFICATION OF hFE(1)
Rank
Range
O
Y
100-200
160-320
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
200
KTC3203
hFE —— IC
1000
VCE= 1V
COMMON
EMITTER
0.9mA Ta=25℃
COLLECTOR CURRENT
DC CURRENT GAIN
0.8mA
0.7mA
0.6mA
100
o
Ta=100 C
hFE
150
IC
(mA)
1.0mA
0.5mA
0.4mA
o
Ta=25 C
100
0.3mA
50
0.2mA
IB=0.1mA
0
0.0
10
0.5
1.0
1.5
2.0
2.5
3.0
COLLECTOR-EMITTER VOLTAGE
3.5
4.0
1
VBEsat —— IC
1.2
10
COLLECTOR CURRENT
(V)
VCE
VCEsat ——
200
100
IC
800
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=25
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
1.0
0.8
Ta=25℃
0.6
0.4
Ta=100℃
β=25
150
100
Ta=100℃
50
0.2
Ta=25℃
0.0
0.1
1
10
COLLECTOR CURRENT
fT
——
10
IC
Cob / Cib
1000
——
800
100
COLLECTOR CURRENT
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
250
o
Ta=25 C
(pF)
C
200
CAPACITANCE
TRANSITION FREQUENCY
1
(mA)
fT
(MHz)
300
IC
0
0.1
800
100
150
100
50
100
Cib
Cob
10
VCE=5V
o
Ta=25 C
0
0
20
40
60
COLLECTOR CURRENT
VBE ——
80
IC
1
0.1
100
IC
100
COLLECTOR POWER DISSIPATION
Pc (mW)
IC (mA)
Pc
800
800
COLLECTOR CURRENT
1
10
REVERSE VOLTAGE
(mA)
o
Ta=100 C
10
Ta=25℃
1
——
V
20
(V)
Ta
625
600
400
200
VCE=1V
0.1
0.2
0
0.4
0.6
www.BDTIC.com/jcst
0.8
BASE-EMITTER VOLTAGE
1.0
VBE(V)
1.2
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150