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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KTC3198
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z General Purpose Switching Application
z Complementary to KTA1266.
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbo
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
0.15
A
PC
Collector Power Dissipation
0.625
W
200
℃/W
RθJA
Thermal Resistance From Junction To Ambient
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA ,IE=0
60
V
Collector-emitter breakdown voltage
V(BR) CEO
IC=5mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=6V, IC=2mA
70
hFE(2)
VCE=6V, IC=150mA
25
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=10mA
Base-emitter saturation voltage
VBE(sat)
IC=100mA,IB=10mA
DC current gain
fT
Transition frequency
0.25
1
VCE=10V,IC=1mA
Cob
Collector Output Capacitance
700
80
VCB=10V, IE=0, f=1MHz
V
MHz
3.5
CLASSIFICATION OF hFE(1)
RANK
O
Y
GR
BL
RANGE
70-140
120-240
200-400
300-700
www.BDTIC.com/jcst
V
pF
Typical Characterisitics
Static Characteristic
5
——
IC
COMMON EMITTER
VCE=6V
15.0uA
13.5uA
12.0uA
hFE
3
10.5uA
9.0uA
7.5uA
2
6.0uA
4.5uA
1
Ta=100℃
400
DC CURRENT GAIN
4
IC
(mA)
hFE
500
COMMON EMITTER
Ta=25℃
COLLECTOR CURRENT
KTC3198
Ta=25℃
300
200
100
3.0uA
IB=1.5uA
0
0
0
3
6
9
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
VCE
12
1
10
(V)
100
COLLECTOR CURRENT
IC
VBEsat
1000
IC
——
150
(mA)
IC
BDTIC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
100
Ta=100℃
Ta=25℃
10
800
Ta=25℃
Ta=100℃
600
400
1
10
100
COLLECTOR CURRENT
Cob/ Cib
10
——
IC
150
1
VCB/ VEB
10
3
REVERSE VOLTAGE
PC
——
V
(MHz)
20
(V)
100
10
0.1
1
COLLECTOR CURRENT
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
500
375
250
125
0
25
50
IC
Ta=25℃
625
0
150
(mA)
fT
TRANSITION FREQUENCY
(pF)
C
CAPACITANCE
Cob
750
——
IC
COMMON EMITTER
VCE=10V
Cib
1
fT
1000
Ta=25℃
1
100
COLLECTOR CURRENT
f=1MHz
IE=0/IC=0
3
10
(mA)
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
IC
(mA)
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