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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTC3198 TRANSISTOR (NPN) 1.EMITTER FEATURES z General Purpose Switching Application z Complementary to KTA1266. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) BDTIC Symbo Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.15 A PC Collector Power Dissipation 0.625 W 200 ℃/W RθJA Thermal Resistance From Junction To Ambient Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA ,IE=0 60 V Collector-emitter breakdown voltage V(BR) CEO IC=5mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE(1) VCE=6V, IC=2mA 70 hFE(2) VCE=6V, IC=150mA 25 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA DC current gain fT Transition frequency 0.25 1 VCE=10V,IC=1mA Cob Collector Output Capacitance 700 80 VCB=10V, IE=0, f=1MHz V MHz 3.5 CLASSIFICATION OF hFE(1) RANK O Y GR BL RANGE 70-140 120-240 200-400 300-700 www.BDTIC.com/jcst V pF Typical Characterisitics Static Characteristic 5 —— IC COMMON EMITTER VCE=6V 15.0uA 13.5uA 12.0uA hFE 3 10.5uA 9.0uA 7.5uA 2 6.0uA 4.5uA 1 Ta=100℃ 400 DC CURRENT GAIN 4 IC (mA) hFE 500 COMMON EMITTER Ta=25℃ COLLECTOR CURRENT KTC3198 Ta=25℃ 300 200 100 3.0uA IB=1.5uA 0 0 0 3 6 9 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 12 1 10 (V) 100 COLLECTOR CURRENT IC VBEsat 1000 IC —— 150 (mA) IC BDTIC β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 100 Ta=100℃ Ta=25℃ 10 800 Ta=25℃ Ta=100℃ 600 400 1 10 100 COLLECTOR CURRENT Cob/ Cib 10 —— IC 150 1 VCB/ VEB 10 3 REVERSE VOLTAGE PC —— V (MHz) 20 (V) 100 10 0.1 1 COLLECTOR CURRENT Ta COLLECTOR POWER DISSIPATION PC (mW) 500 375 250 125 0 25 50 IC Ta=25℃ 625 0 150 (mA) fT TRANSITION FREQUENCY (pF) C CAPACITANCE Cob 750 —— IC COMMON EMITTER VCE=10V Cib 1 fT 1000 Ta=25℃ 1 100 COLLECTOR CURRENT f=1MHz IE=0/IC=0 3 10 (mA) www.BDTIC.com/jcst 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 10 IC (mA)