Download SOT-323 Plastic-Encapsulate Transistors KTA2014

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
KTA2014
TRANSISTOR (PNP)
1. BASE
2. EMITTER
FEATURES
z
Low frequency power amplifier application
z
Power switching application
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC*
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature
Value
-50
-50
-5
150
100
150
Unit
V
V
V
mA
mW
-55-150
℃
BDTIC
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=- 0.1mA,
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
Collector cut-off
Emitter
cut-off
DC current
current
current
gain
Transition
Max
IC= -1mA, IB=0
-50
V
V(BR)EBO
IE=-0.1mA, IC=0
-5
V
ICBO
VCB=-50V, IE=0
-0.1
μA
IEBO
VEB= -5V, IC=0
-0.1
μA
hFE
VCE=-6V,IC=-2mA
70
IC=-100mA, IB= -10mA
VCE=-10V, IC=-1mA,
Collector output capacitance
Cob
VCB=-10V, IE=0
f=1MHz
Noise Figure
NF
VCE=-6V, IC=-0.1mA
f=1KHz,Rg=10KΩ
400
-0.3
80
Range
MARKING
7
pF
10
dB
O(2)
Y(4)
GR(6)
70-140
120-240
200-400
SO
SY
SG
www.BDTIC.com/jcst
V
MHz
CLASSIFICATION OF hFE
Rank
Unit
V
fT
frequency
Typ
-50
VCE(sat)
Collector-emitter saturation voltage
IE=0
Min