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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
KTA1042D
TRANSISTOR (PNP)
TO-252-2L
FEATURES
Low Collector-Emitter Saturation Voltage
1. BASE
APPLICATIONS
General Purpose Application
2. COLLECTOR
3. EMITTER
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-5
A
PC
Collector Power Dissipation
1.25
W
Thermal Resistance from Junction to Ambient
100
℃/W
RθJA
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Test
conditions
Min
Typ
Max
Unit
*
IC=-1mA ,IE=0
-100
*
IC=-50mA, IB=0
-100
V
-5
V
Collector-emitter breakdown voltage
V (BR)CEO
Emitter-base breakdown voltage
V(BR)EBO*
IE=-1mA,IC=0
Collector cut-off current
ICBO
VCB=-100V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
V
-100
μA
-1
mA
hFE(1)
VCE=-5V, IC=-1A
70
hFE(2)
VCE=-5V, IC=-4A
20
VCE(sat)
IC=-4A,IB=-0.4A
Base-emitter voltage
VBE
VCE=-5V, IC=-4A
Transition frequency
fT
VCE=-5V ,IC=-1A
30
MHz
VCB=-10V ,IE=0,f=1MHz
270
pF
DC current gain
Collector-emitter saturation voltage
Cob
Collector output capacitance
240
-2
-1.5
V
V
* Pulse test
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
70-140
120-240
A,Feb,2012
www.BDTIC.com/jcst
KTA1042D
Typical Characteristics
Static Characteristic
-1.4
-1.2
DC CURRENT GAIN
-8mA
-7mA
-6mA
-5mA
-0.8
o
Ta=100 C
hFE
(A)
IC
COLLECTOR CURRENT
COMMON
EMITTER
Ta=25℃
-10mA
-9mA
-1.0
hFE —— IC
1000
-4mA
-0.6
-3mA
-0.4
o
Ta=25 C
100
-2mA
-0.2
IB=-1mA
COMMON EMITTER
VCE= -5V
-0.0
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VCE
10
-1E-4
-12
VBEsat —— IC
-2
-1E-3
(V)
-0.01
-0.1
COLLECTOR CURRENT
VCEsat ——
-1000
IC
(A)
-1
-5
IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
BDTIC
-1
Ta=25℃
Ta=100℃
-0.1
-1E-4
β=10
-1E-3
-0.01
-0.1
COLLECTOR CURRENT
IC ——
-5
-1
IC
-100
Ta=100℃
Ta=25℃
-10
-1E-4
-5
(A)
IC (A)
VBE
1000
-0.1
Cob / Cib
——
-5
-1
IC
(A)
VCB / VEB
f=1MHz
IE=0 / IC=0
Cib
o
o
Ta=25 C
C
(pF)
Ta=100 C
-0.1
CAPACITANCE
COLLECTOR CURRENT
-0.01
COLLECTOR CURRENT
-1
Ta=25℃
-0.01
100
Cob
-1E-3
COMMON EMITTER
VCE=-5V
-1E-4
-0.0
-0.5
-1.0
-1.5
BASE-EMITTER VOLTAGE
Pc
1.50
COLLECTOR POWER DISSIPATION
Pc (W)
β=10
-1E-3
——
-2.0
10
-0.1
-1
REVERSE VOLTAGE
VBE(V)
Ta
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
-10
V
(V)
-20
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