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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
KSC2330
TO – 92M
TO – 92MOD
TRANSISTOR (NPN)
1. COLLECTOR
1. EMITTER
2. BASE
FEATURES
z General Purpose Amplifier Transistor
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
100
mA
1
W
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
BDTIC
IC
Collector Current
PC
Collector Power Dissipation
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=5mA,IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
7
V
Collector cut-off current
ICBO
VCB=200V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
0.1
μA
DC current gain
hFE
VCE=10V, IC=20mA
Collector-emitter saturation voltage
VCE(sat)
Cob
Collector output capacitance
fT
Transition frequency
40
240
IC=10mA,IB=1mA
0.5
V
VCB=10V,IE=0, f=1MHz
4
pF
VCE=30V,IC=10mA
50
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
RANGE
40-80
70-140
120-240
A,Dec,2010
www.BDTIC.com/jcst
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