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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
FMMT4124
TRANSISTOR (NPN)
SOT–23
FEATURES
 Switching Application
MARKING:ZC
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
2. EMITTER
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
3. COLLECTOR
BDTIC
IC
Collector Current
200
mA
PC
Collector Power Dissipation
330
mW
Thermal Resistance From Junction To Ambient
378
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V, IE=0
50
nA
Emitter cut-off current
IEBO
VEB=3V, IC=0
50
nA
hFE(1) *
VCE=1V, IC=2mA
120
hFE(2) *
VCE=1V, IC=50mA
60
Collector-emitter saturation voltage
VCE(sat)*
IC=50mA, IB=5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)*
IC=50mA, IB=5mA
0.95
V
DC current gain
Transition frequency
fT
VCE=20V,IC=10mA,
f=100MHz
360
300
MHz
Collector output capacitance
Cob
VCB=5V, IE=0, f=140KHz
4
pF
Emitter input capacitance
CIb
VBE=0.5V, IE=0, f=140KHz
8
pF
*Pulse test
A,Oct,2010
www.BDTIC.com/jcst
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