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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
D882S
TRANSISTOR (NPN)
TO-92
1.EMITTER
FEATURES
Power dissipation
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
3
A
PC
Collector Power Dissipation
0.625
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC = 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 40V, IE=0
1
µA
Collector cut-off current
ICEO
VCE= 30V, IB=0
10
µA
Emitter cut-off current
IEBO
VEB= 6V, IC=0
1
µA
DC current gain
hFE
VCE=2V, IC= 1A
Collector-emitter saturation voltage
VCE(sat)
IC= 2A, IB= 0.2 A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 2A, IB= 0.2 A
1.5
V
fT
Transition frequency
VCE= 5V ,
f =10MHz
Ic=0.1A
60
50
400
80
MHz
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
www.BDTIC.com/jcst
D882S
Typical Characteristics
Static Characteristic
1.8
IC
hFE
500
4.95mA
4.4mA
DC CURRENT GAIN
(A)
5.5mA
IC
1.4
——
COMMON EMITTER
VCE= 2V
COMMON
EMITTER
Ta=25℃
1.6
1.2
COLLECTOR CURRENT
hFE
600
3.85mA
1.0
3.3mA
0.8
2.75mA
2.2mA
0.6
Ta=100℃
400
300
Ta=25℃
200
1.65mA
0.4
1.1mA
0.2
100
IB=0.55mA
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
VCE
0
10
4.0
100
1000
COLLECTOR CURRENT
(V)
IC
VBEsat ——
2000
IC
3000
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
100
Ta=100 ℃
Ta=25℃
10
Ta=25℃
1000
Ta=100 ℃
β=10
β=10
1
10
100
1000
COLLECTOR CURREMT
IC
3000
——
IC
100
10
3000
100
1000
COLLECTOR CURREMT
(mA)
Cob/Cib
VBE
——
f=1MHz
IE=0/IC=0
Ta=25 ℃
(pF)
(mA)
T=
a 1
00
℃
C
IC
100
10
10
0.1
1
0
300
Cob
CAPACITANCE
100
T=
a 25
℃
COLLECTOR CURRENT
VCB/VEB
Cib
COMMON EMITTER
VCE= 2V
600
900
1200
1
——
IC
PC
750
COLLECTOR POWER DISSIPATION
PC (mW)
fT
500
fT
100
10
VCE=5V
10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
(MHz)
3000
(mA)
500
1000
TRANSITION FREQUENCY
IC
——
V
20
(V)
Ta
625
500
375
250
125
o
Ta=25 C
1
5
www.BDTIC.com/jcst
0
10
100
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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