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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN) TO-92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit BDTIC VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 40V, IE=0 1 µA Collector cut-off current ICEO VCE= 30V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA DC current gain hFE VCE=2V, IC= 1A Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V fT Transition frequency VCE= 5V , f =10MHz Ic=0.1A 60 50 400 80 MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.BDTIC.com/jcst D882S Typical Characteristics Static Characteristic 1.8 IC hFE 500 4.95mA 4.4mA DC CURRENT GAIN (A) 5.5mA IC 1.4 —— COMMON EMITTER VCE= 2V COMMON EMITTER Ta=25℃ 1.6 1.2 COLLECTOR CURRENT hFE 600 3.85mA 1.0 3.3mA 0.8 2.75mA 2.2mA 0.6 Ta=100℃ 400 300 Ta=25℃ 200 1.65mA 0.4 1.1mA 0.2 100 IB=0.55mA 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 0 10 4.0 100 1000 COLLECTOR CURRENT (V) IC VBEsat —— 2000 IC 3000 (mA) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BDTIC 100 Ta=100 ℃ Ta=25℃ 10 Ta=25℃ 1000 Ta=100 ℃ β=10 β=10 1 10 100 1000 COLLECTOR CURREMT IC 3000 —— IC 100 10 3000 100 1000 COLLECTOR CURREMT (mA) Cob/Cib VBE —— f=1MHz IE=0/IC=0 Ta=25 ℃ (pF) (mA) T= a 1 00 ℃ C IC 100 10 10 0.1 1 0 300 Cob CAPACITANCE 100 T= a 25 ℃ COLLECTOR CURRENT VCB/VEB Cib COMMON EMITTER VCE= 2V 600 900 1200 1 —— IC PC 750 COLLECTOR POWER DISSIPATION PC (mW) fT 500 fT 100 10 VCE=5V 10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) (MHz) 3000 (mA) 500 1000 TRANSITION FREQUENCY IC —— V 20 (V) Ta 625 500 375 250 125 o Ta=25 C 1 5 www.BDTIC.com/jcst 0 10 100 COLLECTOR CURRENT IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150