Download Plastic-Encapsulate Transistors D882

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate
D882
TRANSISTOR (NPN)
Transistors
SOT-89-3L
1. BASE
FEATURES
2. COLLECTOR
Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
3. EMITTER
BDTIC
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
3
A
PC
Collector Power Dissipation
0.5
W
RӨJA
Thermal Resistance from Junction to Ambient
℃/W
25
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC = 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 40V, IE=0
1
µA
Collector cut-off current
ICEO
VCE= 30V, IB=0
10
µA
Emitter cut-off current
IEBO
VEB= 6V, IC=0
1
µA
hFE(1)
VCE=2V, IC= 1A
60
hFE(2)
VCE=2V, IC= 100mA
32
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC= 2A, IB= 0.2 A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 2A, IB= 0.2 A
1.5
V
fT
Transition frequency
VCE= 5V , Ic=0.1A
f =10MHz
50
MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
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D882
Typical Characteristics
Static Characteristic
2.00
10mA 9mA
1.75
IC
DC CURRENT GAIN
IC
6mA
5mA
1.25
Ta=100℃
hFE
7mA
(A)
——
COMMON EMITTER
Ta=25 ℃
8mA
1.50
COLLECTOR CURRENT
hFE
1000
4mA
1.00
3mA
0.75
Ta=25℃
100
2mA
0.50
0.25
COMMON EMITTER
VCE= 2V
IB=1mA
0.00
10
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
7
8
1
VCE (V)
10
100
COLLECTOR CURRENT
IC
VBEsat ——
2000
1000
IC
3000
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
100
Ta=100 ℃
10
Ta=25℃
1000
Ta=25℃
Ta=100 ℃
β=10
1
β=10
100
1
10
100
COLLECTOR CURREMT
IC
3000
——
1000
IC
1
3000
10
100
COLLECTOR CURREMT
(mA)
Cob/Cib
VBE
——
1000
IC
VCB/VEB
500
f=1MHz
IE=0/IC=0
1000
C
IC
T=
a 25
℃
100
CAPACITANCE
100
T=
a 10
0℃
COLLECTOR CURRENT
Cib
(pF)
(mA)
Ta=25 ℃
10
COMMON EMITTER
VCE= 2V
1
0
300
600
900
1200
PC
600
——
Cob
10
0.1
1
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
COLLECTOR POWER DISSIPATION
PC (mW)
3000
(mA)
Ta
500
400
300
200
100
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
20