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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-89-3L Plastic-Encapsulate Transistors
CXT5401
TRANSISTOR (PNP)
SOT-89-3L
FEATURE
z
Switching and amplification in high voltage
Applications such as telephony
z
Low current(max. 500mA)
z
High voltage(max.160v)
1. BASE
1
2. COLLECTOR
1
22
3
3. EMITTER
0$5.,1*5401
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.5
A
PC
Collector Power Dissipation
0.5
W
250
℃/W
150
℃
-55~150
℃
TJ
Thermal Resistance From
Junction To Ambient
Junction Temperature
Tstg
Storage Temperature
RθJA
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, IE=0
-160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = -1mA, IB=0
-150
V
Emitter-base breakdown voltage
V(BR)EBO
IE = -10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB = -120 V, IE=0
-50
nA
Emitter cut-off current
IEBO
VEB= -3V, IC=0
-50
nA
hFE(1)
VCE= -5V, IC=-1 mA
50
hFE(2)
VCE= -5V, IC= -10 mA
60
hFE(3)
VCE= -5V, IC=-50 mA
50
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
300
VCE(sat)
IC= -10 mA, IB= -1 mA
-0.2
V
VCE(sat)
IC= -50 mA, IB= -5 mA
-0.5
V
VBE(sat)
IC= -10 mA, IB= -1 mA
-1
V
VBE(sat)
IC= -50 mA, IB= -5 mA
VCE= -10V, IC= -10mA,
f = 100MHz
VCB=-10V, IE= 0,f=1MHz
VCE= -5.0V, IC= -200μA,
RS= 10Ω,f =10Hz to15.7kHz
-1
V
300
MHz
6
pF
8
dB
Transition frequency
fT
Output Capacitance
Cob
Noise Figure
NF
100
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
- 30
COMMON
EMITTER
Ta=25℃
-200uA
DC CURRENT GAIN
- 25
-160uA
-140uA
- 20
-120uA
-100uA
- 15
-80uA
- 10
VCE= -5V
o
Ta=100 C
-180uA
IC
hFE —— IC
500
hFE
(mA)
- 35
COLLECTOR CURRENT
CXT5401
o
Ta=25 C
100
-60uA
-40uA
10
- 5
IB=-20uA
0
0
-2
- 4
- 10
- 8
-6
- 12
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
- 1.0
- 14
VCE
4
- 0.3
- 18
- 16
-1
(V)
IC
- 10
COLLECTOR CURRENT
VCEsat ——
-1
IC
(mA)
- 500
- 100
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
- 0.9
- 0.8
Ta=25℃
- 0.7
- 0.6
Ta=100℃
- 0.5
- 0.4
- 0.3
-0.1
-1
-10
COLLECTOR CURRENT
Cob / Cib
——
IC
-100
Ta=100℃
-0.1
Ta=25℃
-0.01
-0.1
-1
VCB / VEB
fT
300
o
Ta=25 C
-100
IC
(mA)
—— IC
250
TRANSITION FREQUENCY
C
fT
(pF)
(MHz)
f=1MHz
IE=0 / IC=0
Cib
-10
COLLECTOR CURRENT
(mA)
50
CAPACITANCE
β=10
10
Cob
200
150
100
50
VCE=-10V
o
1
- 0.5
-10
REVERSE VOLTAGE
Pc
COLLECTOR POWER DISSIPATION
Pc (W)
0.6
——
V
Ta=25 C
0
-0
-5
-10
Ta
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
-15
COLLECTOR CURRENT
(V)
125
150
-20
-
IC
-25
(mA)
-30
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