Download TO-92 Plastic-Encapsulate Transistors C1815

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C1815
TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
1.EMITTER
2.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
Collector Power Dissipation
400
mW
312
℃/W
Junction Temperature
150
Storage Temperature
-55~+150
℃
PC
RθJA
Tj
Tstg
3.BASE
BDTIC
Thermal Resistance from Junction
to Ambient
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=
=
100uA, IE 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC==
0. 1mA, IB 0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=
= 100uA, IC 0
5
V
Collector cut-off current
ICBO
=
VCB= 60V,IE 0
0.1
uA
Collector cut-off current
ICEO
=
VCE= 50V, IB 0
0.1
uA
Emitter cut-off current
VEB=5V,IC 0
IEBO =
0.1
uA
DC current gain
hFE
VCE= 6 V, IC= 2mA
70
700
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,
=
IB 10mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA,
=
IB 10mA
1
V
Transition frequency
fT
Collector Output Capacitance
Cob
Noise Figure
NF
CLASSIFICATION OF
Rank
Range
VCE=10 V, IC= 1mA
f=30MHz
VCB=10V,IE=0
f=1MHz
VCE=6V,IC=0.1mA
f =1KHz,RG=10K
80
MHz
3.5
pF
10
dB
hFE
O
Y
GR
BL
70-140
120-240
200-400
350-700
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Typical Characteristics
Static Characteristic
0.012
——
IC
COMMON EMITTER
VCE=6V
54uA
(A)
Ta=100℃
hFE
48uA
0.008
42uA
DC CURRENT GAIN
IC
COLLECTOR CURRENT
hFE
1000
COMMON EMITTER
Ta=25℃
60uA
0.010
C1815
36uA
0.006
30uA
24uA
0.004
18uA
Ta=25℃
100
12uA
0.002
IB=6uA
0.000
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE
VCEsat
1
——
VCE
10
0.2
12
1
100 150
10
COLLECTOR CURRENT
(V)
IC
VBEsat
2
IC
——
(mA)
IC
BDTIC
β=10
1
0.3
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=10
0.1
Ta=100℃
Ta=25℃
0.03
0.01
0.1
1
COLLECTOR CURRENT
IC
150
——
IC
Ta=100℃
0.1
0.1
100 150
10
Ta=25℃
1
COLLECTOR CURRENT
(mA)
VBE
Cob/ Cib
20
100 150
10
IC
(mA)
—— VCB/ VEB
f=1MHz
IE=0/ IC=0
100
(pF)
C
T=
a 25
℃
1
0.1
0.0
COMMON EMITTER
VCE=6V
0.2
0.4
0.6
0.8
BASE-EMITTER VOLTAGE
fT
1000
Cib
CAPACITANCE
10
T=
a 10
0℃
COLLECTOR CURRENT
IC
(mA)
Ta=25℃
10
——
VBE
1.0
Cob
1
0.2
1.2
1
(V)
10
REVERSE VOLTAGE
IC
PC
500
——
V
20
(V)
Ta
(MHz)
COMMON EMITTER
VCE=10V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25℃
100
10
0.4
400
300
200
100
0
1
3
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COLLECTOR CURRENT
10
30
IC
(mA)
100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150