Download TO-92 Plastic-Encapsulate Transistors C945

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
C945
Plastic-Encapsulate Transistors
TO-92
TRANSISTOR (NPN )
1.EMITTER
FEATURE
z
Excellent hFE linearity
z
Low noise
z
Complementary to A733
2.COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
400
mW
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature
-55-125
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=1mA , IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=100 μA , IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100 μ A, IC=0
5
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=45V, IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V ,IC=0
0.1
μA
hFE(1)
VCE=6V , IC=1mA
70
hFE(2)
VCE=6V , IC=0.1mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
DC current gain
fT
Transition frequency
Collector output capacitance
Cob
Noise figure
NF
VCE=6V,IC=10mA,f=30MHz
700
200
VCB=10V,IE=0,f=1MHz
VCE=6V,IC=0.1mA
RG=10kΩ,f=1MHz
MHz
3.0
pF
10
dB
CLASSIFICATION OF hFE(1)
Rank
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
www.BDTIC.com/jcst
A,Jan,2011
Typical Characteristics
Static Characteristic
6
VCE= 6V
COMMON
EMITTER
Ta=25℃
5
Ta=100℃
hFE
18uA
16uA
4
DC CURRENT GAIN
(mA)
IC
hFE —— IC
1000
20uA
COLLECTOR CURRENT
C945
14uA
12uA
3
10uA
8uA
2
Ta=25℃
100
6uA
4uA
1
IB=2uA
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE
VCE
10
0.1
12
10
VCEsat ——
VBEsat —— IC
1.0
1
COLLECTOR CURRENT
(V)
IC
100 150
(mA)
IC
300
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
0.8
Ta=25℃
Ta=100℃
0.6
0.4
0.2
0.1
1
10
COLLECTOR CURRENT
fT
500
——
Ta=25℃
(mA)
1
IC
100
100 150
10
COLLECTOR CURRENT
Cob / Cib
——
IC
(mA)
VCB / VEB
(MHz)
(pF)
Ta=25℃
C
fT
100
CAPACITANCE
TRANSITION FREQUENCY
Ta=100℃
f=1MHz
IE=0 / IC=0
Cib
10
Cob
VCE=6V
Ta=25℃
10
-0.1
-1
-10
COLLECTOR CURRENT
Pc
500
COLLECTOR POWER DISSIPATION
Pc (mW)
100
10
0.1
100 150
IC
β=10
——
IC
-100
1
0.1
1
REVERSE VOLTAGE
(mA)
Ta
400
300
200
100
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
125
10
V
(V)
20