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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BF820/BF822
TRANSISTOR (NPN)
SOT-23
1. BASE
FEATURES
z
Low current (max.50 mA)
z
High voltage (max.300V)
z
Telephony and professional communication equipment.
2. EMITTER
3. COLLECTOR
MARKING: BF820:1V, BF822: 1X
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
VCBO
BF820
BF822
BF820
BF822
Collector-Emitter Voltage
VCEO
Value
Unit
300
250
300
250
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
50
mA
PC
Collector Power Dissipation
0.25
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
IC=100μA, IE=0
Min
BF820
BF822
BF820
BF822
Max
300
250
300
250
Unit
V
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
Collector cut-off current
ICBO
VCB=200V,IE=0
0.01
μA
Emitter cut-off current
IEBO
VEB= 5V,IC=0
0.05
μA
DC current gain
hFE
VCE= 20V,IC=25mA
VCE(sat)
IC=30mA,IB= 5mA
0.6
V
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
fT
Cob
IC=1mA, IB=0
VCE=10V, IC= 10mA,f=100MHz
VCB=30V,IE=0,f=1MHz
www.BDTIC.com/jcst
V
5
V
50
60
MHz
1.6
pF
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