Download SOT-23 Plastic-Encapsulate Transistors BCW66

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
BCW66
TRANSISTOR (NPN)
1. BASE
2. EMITTER
FEATURES
Complementary to BCW68
3. COLLECTOR
BCW66 is subdivided into three groups F,G and H according to DC current gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
75
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
BDTIC
IC
Collector Current -Continuous
0.8
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 ~ +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
IC= 10μA, IE=0
75
V
V(BR)CEO
IC= 10mA, IB=0
45
V
5
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)EBO
IE=10μA, IC=0
Collector cut-off current
ICBO
VCB=45 V, IE=0
0.02
Collector cut-off current
IEBO
VEB=4 V, IC=0
0.02
Emitter-base breakdown voltage
hFE1
hFE2
DC current gain
hFE3
hFE4
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
Output capacitance
Input capacitance
Noise figure
VCE=10V, IC=0. 1mA
BCW66F
BCW66G
BCW66H
VCE=1V, IC= 10mA
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
VCE=1V, IC=100mA
VCE=2V, IC=500mA
35
50
80
75
110
180
100
160
250
35
60
100
Range
Marking
F
100-250
μA
μA
250
400
630
0.3
V
IC=500mA, IB=50mA
0.7
V
IC=500mA, IB=50mA
2
V
VCE=10V,IC=20mA,f=100MHz
fT
Cob
Cib
VCB=10V,IE=0,f=1MHz
12
pF
VEB=0.5V,IE=0,f=1MHz
80
pF
NF
VCE=5V,IC=0.2mA,f=1KHz,
Rs=1KΩ,BW=200Hz
10
dB
100
G
160-400
H
250-630
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EF
V
IC=100mA, IB=10mA
MARKING
Rank
Unit
EG
EH
MHz
Typical Characteristics
Static Characteristic
720uA 640uA
800uA
VCE= 1V
COMMON
EMITTER
Ta=25℃
hFE
250
560uA
480uA
200
hFE —— IC
500
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
300
BCW66
400uA
150
320uA
240uA
100
160uA
o
Ta=100 C
400
300
o
Ta=25 C
200
100
50
IB=80uA
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VCE
7
0
0.1
8
VBEsat —— IC
1.2
1
(V)
10
COLLECTOR CURRENT
VCEsat ——
400
IC
100
800
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
1.0
0.8
Ta=25℃
0.6
0.4
Ta=100℃
β=10
300
200
Ta=100℃
100
0.2
Ta=25℃
0.0
0.1
1
10
100
COLLECTOR CURRENT
fT
——
(mA)
IC
100
10
Cob / Cib
——
800
100
IC
(mA)
VCB / VEB
180
f=1MHz
IE=0 / IC=0
160
Ta=25 C
(pF)
o
C
140
120
100
80
60
Cib
10
Cob
40
VCE=10V
20
o
Ta=25 C
0
1
10
100
COLLECTOR CURRENT
Pc
0.3
COLLECTOR POWER DISSIPATION
Pc (W)
1
COLLECTOR CURRENT
CAPACITANCE
TRANSITION FREQUENCY
fT
(MHz)
200
IC
0
0.1
800
——
IC
1
0.1
1
REVERSE VOLTAGE
(mA)
Ta
0.2
0.1
0.0
0
25
50
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75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
20