Download SOT-23 Plastic-Encapsulate Transistors BCW68

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
BCW68
TRANSISTOR (PNP)
1. BASE
2. EMITTER
FEATURES
Complementary to BCW66, BCW68 is subdivided into
3. COLLECTOR
three groups F, G and H according to its DC current gain.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
BDTIC
IC
Collector Current -Continuous
-0.8
A
PC
Collector Power Dissipation
0.33
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 ~ +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=- 10μA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA, IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-45 V, IE=0
-0.02
Collector cut-off current
IEBO
VEB=-4 V, IC=0
-0.02
hFE1
hFE2
DC current gain
hFE3
hFE4
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
fT
Cob
Cib
Transition frequency
Output capacitance
Input capacitance
VCE=-10V, IC=-0. 1mA
VCE=-1V,
IC=- 10mA
VCE=-1V,
IC=- 100mA
VCE=-2V,
IC=- 500mA
F
G
H
F
G
H
F
G
H
F
G
H
IC=-100mA, IB=-10mA
35
50
80
75
120
180
100
160
250
35
60
100
Range
Marking
F
100-250
V
IC=-500mA, IB=-50mA
-0.7
V
IC=-100mA, IB=-10mA
-1.25
V
IC=-500mA, IB=-50mA
-2
V
VCE= -5V,IC=-50mA,f=20MHz
200
MHz
VCB= -10V,IE=0,f=1MHz
6
pF
VEB= -0.5V,IE=0,f=1MHz
60
pF
G
160-400
H
250-630
www.BDTIC.com/jcst
DF
250
400
630
-0.3
MARKING
Rank
μA
μA
DG
DH
Typical Characteristics
Static Characteristic
-720uA
-800uA
COMMON
EMITTER
Ta=25℃
-560uA
-640uA
DC CURRENT GAIN
COLLECTOR CURRENT
o
-400uA
-200
-320uA
-150
-240uA
-100
-160uA
-50
COMMON EMITTER
VCE=-1V
700
-480uA
-250
IC
(mA)
-300
hFE —— IC
800
hFE
-350
BCW68
Ta=100 C
600
500
400
o
Ta=25 C
300
200
100
IB=-80uA
-0
-0
-1
-2
-3
-4
-5
-6
COLLECTOR-EMITTER VOLTAGE
VCE
-7
-8
-0.1
VBEsat —— IC
-1.2
-1
(V)
-10
COLLECTOR CURRENT
VCEsat ——
-500
IC
-100
-800
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
-1.0
-0.8
Ta=25℃
-0.6
-0.4
Ta=100℃
β=10
-400
-300
-200
Ta=100℃
-100
-0.2
Ta=25℃
-0.0
-0.1
-1
-10
-100
COLLECTOR CURRENT
fT
——
(mA)
IC
100
-10
Cob / Cib
——
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
250
C
200
-800
-100
IC
Cib
CAPACITANCE
TRANSITION FREQUENCY
-1
COLLECTOR CURRENT
fT
(MHz)
300
IC
-0
-0.1
-800
150
100
10
Cob
COMMON EMITTER
VCE=-5V
50
o
Ta=25 C
0
-1
-10
-100
COLLECTOR CURRENT
Pc
COLLECTOR POWER DISSIPATION
Pc (W)
0.4
——
IC
1
-0.1
-1
REVERSE VOLTAGE
(mA)
Ta
0.33
0.3
0.2
0.1
0.0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
-10
V
(V)
-20