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JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
BC817W
TRANSISTOR (NPN)
SOT-323
FEATURES
 For General AF Applications
 High Collector Current
 High Current Gain
 Low Collector-Emitter Saturation Voltage
1. BASE
2. EMITTER
3. COLLECTOR
BDTIC
MAXMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Dissipation
0.2
W
Thermal Resistance from Junction to Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
50
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1μA,IC=0
5
V
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
VCB=20V,IE=0
IEBO
VEB=5V,IC=0
hFE(1)
VCE=1V,IC=100mA
100
hFE(2)
VCE=1V,IC=500mA
40
V
0.1
μA
0.1
μA
600
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
0.7
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=50mA
1.2
V
Base-emitter voltage
VBE(ON)
VCE=1V,IC= 500mA
1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCE=5V,IC=10mA,f=100MHz
100
VCB=10V,f=1MHz
MHz
5
pF
CLASSIFICATION of hFE (1)
Rank
BC817-16W
BC817-25W
BC817-40W
Range
100-250
160-400
250-600
Marking
6A
6B
www.BDTIC.com/jcst
6C
Typical Characteristics
BC817W
Static Characteristic
250
(mA)
COMMON EMITTER
Ta=25℃
——
IC
0.80mA
0.72mA
200
Ta=100℃
IC
hFE
0.64mA
0.48mA
0.40mA
100
0.32mA
0.24mA
50
Ta=25℃
DC CURRENT GAIN
0.56mA
150
COLLECTOR CURRENT
hFE
1000
100
0.16mA
COMMON EMITTER
VCE= 1V
IB=0.08mA
0
0.0
0.5
1.0
1.5
2.0
2.5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1200
3.0
10
0.5
3.5
1
10
IC
VCEsat
1000
500
100
COLLECTOR CURRENT
VCE (V)
——
IC
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
900
600
Ta=25℃
Ta=100 ℃
300
0.1
1
10
100
COLLECTOR CURREMT
IC
——
IC
Ta=100 ℃
Ta=25℃
10
0.1
500
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
1000
500
——
100
IC
500
(mA)
IC
(MHz)
COMMON EMITTER
VCE=1V
100
10
TRANSITION FREQUENCY
T =2
5℃
a
℃
T=
a 10
0
COLLECTOR CURRENT
IC
fT
(mA)
100
1
100
10
COMMON EMITTER
VCE= 5V
Ta=25℃
0.1
300
600
900
1
0.69
1200
1
10
1000
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
CAPACITANCE
C
(pF)
Ta=25 ℃
100
Cob
1
0.1
0.1
PC
250
f=1MHz
IE=0/IC=0
10
100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
IC
(mA)
Ta
200
150
100
50
0
1
www.BDTIC.com/jcst
REVERSE VOLTAGE
10
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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