Download SOT-523 Plastic-Encapsulate Transistors BC857T

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-523 Plastic-Encapsulate Transistors
BC857T
SOT-523
TRANSISTOR (PNP)
FEATURES
Ideally suited for automatic insertion
z
For Switching and AF Amplifier Applications
1. BASE
z
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-6
V
IC
PC
TJ
Tstg
Collector Current –Continuous
-0.1
A
Collector Power Dissipation
150
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -10µA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA, IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -1µA, IC=0
-6
V
Collector Cutoff Current
ICBO
VCB=-30V
DC current gain
hFE
VCE=-5V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter
VBE(on)
voltage
fT
Transition frequency
Cob
Collector output capacitance
-15
125
800
IC=-10mA, IB=-0.5 mA
-0.3
IC=-100mA, IB=-5 mA
-0.65
IC=-10mA, IB=-0.5 mA
-0.7
IC=-100mA, IB= -5 mA
-0.9
VCE= -5V, IC= -2mA
-600
VCE= -5V, IC= -10mA
VCE= -5 V, IC= -10mA
f=100MHz
nA
-750
-820
100
VCB=-10V,f=1MHz
V
V
mV
MHz
4.5
pF
10
dB
VCE=-5V,IC=-0.2mA,
NF
Noise figure
f=1kHz,
RS=2kΩ,BW=200Hz
CLASSIFICATION OF hFE
Rank $
Range
BC
1-250 -4 Marking E F G
www.BDTIC.com/jcst
Related documents