Download SOT-523 Plastic-Encapsulate Transistors BC847T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-523 Plastic-Encapsulate Transistors
BC847T TRANSISTOR (NPN)
SOT-523
FEATURES
y
Ideally suited for automatic insertion
y
For Switching and AF Amplifier Applications
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Value
Unit
VCBO
Symbol
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
6
V
IC
PC*
TJ
Tstg
Parameter
Collector Current –Continuous
0.1
A
Collector Power Dissipation
150
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 10µA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1 µA, IC=0
6
V
Collector Cutoff Current
ICBO
DC current gain
VCB=30V
15
BC847AT
BC847BT
hFE
VCE= 5V, IC= 2mA
BC847CT
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter
VBE(on)
voltage
Transition frequency
fT
Collector output capacitance
Noise figure
Cob
BC847BT
BC847CT
NF
110
220
200
450
420
800
IC=10mA, IB=0. 5mA
0.25
IC=100mA, IB= 5mA
0.6
IC=10mA, IB=0. 5mA
0.7
IC=100mA, IB= 5mA
0.9
VCE= 5V, IC= 2mA
580
VCE= 5V, IC= 10mA
VCE= 5 V,
IC= 10mA
f=100MHz
660
V
V
700
770
100
V
MHz
VCB=10V,f=1MHz
4.5
VCE=5V,f=1kHz,
10
RS=2kΩ,BW=200Hz
4
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nA
pF
dB
Typical Characteristics
Static Characteristic
(mA)
10
hFE
3000
COMMON
EMITTER
Ta=25℃
8
——
IC
COMMON EMITTER
VCE= 5V
1000
DC CURRENT GAIN
IC
18uA
16uA
6
14uA
12uA
4
Ta=100℃
hFE
20uA
COLLECTOR CURRENT
BC847T
10uA
8uA
Ta=25℃
100
6uA
2
4uA
IB=2uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
6
10
7
1
10
COLLECTOR CURRENT
VCE (V)
VCEsat
IC
——
IC
100
(mA)
IC
500
BDTIC
β=20
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=20
800
Ta=25℃
600
Ta=100 ℃
400
200
0.1
1
10
COLLECTOR CURREMT
IC
100
——
IC
Ta=100 ℃
100
Ta=25℃
10
0.1
100
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
500
100
(mA)
IC
T =2
5℃
a
TRANSITION FREQUENCY
10
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
(MHz)
COMMON EMITTER
VCE=5V
——
IC
1
100
COMMON EMITTER
VCE=5V
Ta=25℃
0.1
200
400
600
10
0.25
800
2
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
CAPACITANCE
C
(pF)
Ta=25 ℃
Cob
1
0.1
0.1
6
PC
200
f=1MHz
IE=0/IC=0
10
4
8
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
IC
10
12
125
150
(mA)
Ta
150
100
50
0
1
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REVERSE VOLTAGE
10
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
C,Aug,2013