Download SOT-323 Plastic-Encapsulate Transistors BC807W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
BC807W
TRANSISTOR (PNP)
SOT-323
FEATURES
z
Ldeally suited for automatic insertion
z
Epitaxial planar die construction
z
Complementary to BC817W
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
BDTIC
IC
Collector Current -Continuous
-0.5
A
PC
Collector Power Dissipation
0.2
W
Thermal Resistance from Junction to Ambient
6
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
VCBO
IC=-10μA,IE=0
-50
V
Collector-emitter breakdown voltage
VCEO
IC=-10mA,IB =0
-45
V
Emitter-base breakdown voltage
VEBO
IE=-1μA,IC =0
-5
V
Collector cut-off current
ICBO
VCB=-20 V , IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-20 V , IB=0
-0.2
μA
Emitter cut-off current
IEBO
VEB=-5 V , IC=0
-0.1
μA
hFE(1)
VCE=-1V,IC= -100mA
100
hFE(2)
VCE=-1V,IC= -500mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50 mA
-0.7
V
Base-emitter
VBE(on)
VCE= -1V,IC= -500mA
-1.2
V
DC current gain
voltage
Transition frequency
fT
Collector output capacitance
Cob
VCE=-5 V, IC= -10mA
f=100MHz
VCB=-10V,f=1MHz
600
80
MHz
10
CLASSIFICATION of hFE (1)
Rank
Range
Marking
BC807-16W
BC807-25W
BC807-40W
100-250
160-400
250-600
5A
5B
5C
www.BDTIC.com/jcst
pF
BC807W
Typical Characteristics
Static Characteristic
-160
COMMON
EMITTER
Ta=25℃
-360uA
IC
COLLECTOR CURRENT
hFE
-400uA
-320uA
-100
-280uA
-240uA
-80
-200uA
-60
——
IC
Ta=100℃
DC CURRENT GAIN
(mA)
-140
-120
hFE
1000
-160uA
Ta=25℃
100
-120uA
-40
-80uA
-20
COMMON EMITTER
VCE= -1V
IB= -40uA
-0
-0.0
-0.5
-1.0
-1.5
-2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
10
-0.1
-2.5
-1
-10
-100
COLLECTOR CURRENT
VCE (V)
IC
VBEsat ——
-1200
IC
-500
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=100 ℃
β=10
-0.3
-1
-10
-600
Ta=100 ℃
IC
——
-1
-100
COLLECTOR CURREMT
(mA)
VBE
fT
500
——
IC
-500
(mA)
IC
TRANSITION FREQUENCY
-10
T =2
5℃
a
T=
a 10
0℃
fT
IC
-100
-1
COMMON EMITTER
VCE= -1V
100
COMMON EMITTER
VCE=-5V
Ta=25℃
-0.1
10
-0
-300
-600
-900
-1200
-1
-10
BESE-EMMITER VOLTAGE VBE (mV)
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
(pF)
C
10
1
-0.1
Cob
-1
PC
250
Ta=25 ℃
Cib
-10
V
(V)
-20
——
IC
(mA)
Ta
200
150
100
50
0
www.BDTIC.com/jcst
REVERSE VOLTAGE
-100
COLLECTOR CURRENT
f=1MHz
IE=0/IC=0
CAPACITANCE
-10
(MHz)
-500
IC
β=10
-300
-0.1
-500
-100
COLLECTOR CURREMT
(mA)
Ta=25℃
Ta=25℃
-10
COLLECTOR CURRENT
-900
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150