Download TO-92 Plastic-Encapsulate Transistors BC337/BC338

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337/BC338
TRANSISTOR
(NPN)
TO-92
FEATURES
Power dissipation
1. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Tj
Tstg
BC337
50
BC338
30
Unit
3. EMITTER
V
BDTIC
VCEO
PD
Value
2.BASE
BC337
45
BC338
25
V
5
V
Collector Current -Continuous
800
mA
Total Device Dissipation
625
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
Emitter-base breakdown voltage
Collector cut-off current
BC337
BC338
Collector cut-off current
BC337
BC338
Emitter cut-off current
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
VCBO
Collector Output Capacitance
conditions
IC= 10mA ,
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
Cob
MIN
TYP
MAX
UNIT
IC= 100uA, IE=0
50
30
V
V
45
25
5
V
V
V
IB=0
VCEO
fT
Transition frequency
Test
IE= 10uA, IC=0
VCB= 45V, IE=0
VCB= 25V, IE=0
VCE= 40V, IB=0
VCE= 20V, IB=0
VEB= 4 V, IC=0
VCE=1V, IC= 100mA
VCE=1V, IC= 300mA
IC=500mA, IB= 50mA
IC= 500mA, IB=50mA
VCE=1V, IC= 300mA
VCE= 5V, IC= 10mA
f = 100MHz
VCB=10V,IE=0
f=1MHZ
100
100
160
250
60
210
www.BDTIC.com/jcst
0.1
0.1
0.2
0.2
0.1
630
250
400
630
uA
0.7
1.2
1.2
V
V
V
uA
uA
MHz
15
pF
BC337
Typical Characterisitics
hFE
Static Characteristic
250
1000
800uA
720uA
COMMON
EMITTER
Ta=25℃
200
Ta=100℃
hFE
480uA
150
DC CURRENT GAIN
COLLECTOR CURRENT
IC
560uA
IC
(mA)
640uA
——
400uA
320uA
100
240uA
160uA
50
Ta=25℃
100
COMMON EMITTER
VCE=3V
IB=80uA
0
10
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
VCE
6
1
(V)
10
IC
1000
800
100
COLLECTOR CURRENT
VBEsat
IC
——
(mA)
IC
Ta=100℃
Ta=25℃
10
β=10
1
1
10
100
COLLECTOR CURRENT
fT
IC
Ta=100℃
β=10
100
1
800
(mA)
100
Cob/ Cib
IC
(mA)
—— VCB/ VEB
f=1MHz
IE=0/ IC=0
Ta=25℃
(pF)
(MHz)
800
100
Cib
100
CAPACITANCE
C
TRANSITION FREQUENCY
fT
10
COLLECTOR CURRENT
IC
——
Ta=25℃
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
1000
100
10
Cob
COMMON EMITTER
Ta=25℃
VCE=5V
10
1
1
0.1
10
COLLECTOR CURRENT
PC
650
——
IC
(mA)
1
REVERSE VOLTAGE
Ta
600
COLLECTOR POWER DISSIPATION
PC (mW)
550
500
450
400
350
300
250
200
150
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
20
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