Download -2L Plastic-Encapsulate Transistors TO-252 B772M

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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
B772M
TO-252-2L
TRANSISTOR (PNP)
FEATURES
1. BASE
Low Speed Switching
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-3
A
PC
Collector Power Dissipation
1.25
W
RӨJA
Thermal Resistance, junction to Ambient
100
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA ,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40V, IE=0
-1
μA
Collector cut-off current
ICEO
VCE=-30V, IB=0
-10
μA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-1
μA
DC current gain
hFE
VCE= -2V, IC= -1A
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
-1.5
V
Transition frequency
60
VCE= -5V, IC=-0.1A
fT
50
f =10MHz
400
80
MHz
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
www.BDTIC.com/jcst
B772M
Typical Characteristics
IC
-2.25
-1.75
COMMON
EMITTER
Ta=25 ℃
hFE
-5mA
-4mA
-3mA
-1.00
-0.75
IC
Ta=25℃
DC CURRENT GAIN
IC
-6mA
-1.25
——
Ta=100℃
-7mA
-1.50
COLLECTOR CURRENT
hFE
1000
-10mA
-9mA
-8mA
-2.00
(A)
VCE
——
-2mA
100
-0.50
IB=-1mA
-0.25
COMMON EMITTER
VCE= -2V
-0.00
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
-6
10
-10
-7
-100
VBEsat ——
IC
-3000
-1000
COLLECTOR CURRENT
VCE (V)
IC
(mA)
IC
-2000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=100 ℃
-10
Ta=25℃
-1000
β=10
-1
-1
-10
-100
COLLECTOR CURREMT
IC
-3000
——
-1000
IC
Ta=25℃
Ta=100 ℃
β=10
-100
-1
-3000
-10
-100
COLLECTOR CURREMT
(mA)
Cob/Cib
VBE
——
-1000
IC
VCB/VEB
500
f=1MHz
IE=0/IC=0
-1000
C
Cib
100
CAPACITANCE
-100
T=
a 25
℃
T=
a 10
0℃
COLLECTOR CURRENT
IC
(pF)
(mA)
Ta=25 ℃
-10
COMMON EMITTER
VCE= -2V
-1
-0
-300
-600
-900
-1200
REVERSE VOLTAGE VBE (mV)
PC
1400
COLLECTOR POWER DISSIPATION
PC (mW)
-3000
(mA)
——
Cob
10
-0.1
-1
REVERSE VOLTAGE
Ta
1200
1000
800
600
400
200
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
-10
V
(V)
-20
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