Download TO-92 Plastic-Encapsulate Transistors BC327/ BC328

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC327/ BC328
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
1. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2.BASE
Symbol
3. EMITTER
VCBO
Parameter
Value
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
-800
mA
Collector Power Dissipation
625
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Tstg
V
BDTIC
VCEO
Tj
BC327
BC328
BC327
BC328
Unit
-50
-30
-45
-25
-5
PC
Collector-Base Voltage
Collector-Emitter Voltage
V
V
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
BC327
BC328
Collector-emitter breakdown voltage
BC327
BC328
Test
conditions
Min
Typ
Max
Unit
IC= -100uA, IE=0
VCBO
IC= -10mA ,
V
-45
-25
V
-5
V
IB=0
VCEO
Emitter-base breakdown voltage
-50
-30
VEBO
IE= -10uA, IC=0
BC327
BC328
ICBO
VCB= -45 V , IE=0
VCB= -25V , IE=0
-0.1
-0.1
uA
BC327
BC328
ICEO
VCE= -40 V , IB=0
VCE= -20 V , IB=0
-0.2
-0.2
uA
IEBO
VEB= -4 V ,
-0.1
uA
hFE(1)
VCE=-1 V,
IC= -100mA
100
hFE(2)
VCE=-1 V,
IC= -300mA
40
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=0
630
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= -500mA, IB=-50mA
-1.2
V
VCE=-1 V, IC= -300mA
-1.2
V
Base-emitter voltage
VBE
fT
Transition frequency
Collector Output Capacitance
Cob
VCE= -5V, IC= -10mA
f = 100MHz
VCB=-10V,IE=0
f=1MHZ
260
MHz
12
pF
CLASSIFICATION OF hFE
Rank
Range
16
25
40
100-250
160-400
250-630
www.BDTIC.com/jcst
Typical Characterisitics
BC327/BC328
hFE
Static Characteristic
-300
COMMON
EMITTER
Ta=25℃
Ta=100℃
hFE
-0.7mA
-0.6mA
-200
-0.5mA
-0.4mA
-0.3mA
-100
Ta=25℃
DC CURRENT GAIN
IC
(mA)
-0.8mA
COLLECTOR CURRENT
—— IC
1000
-1.0mA
-0.9mA
-0.2mA
100
IB=-0.1mA
COMMON EMITTER
VCE= -1V
-0
10
-0
-2
-4
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1
——
-6
VCE
-7
-10
-800
-100
(V)
COLLECTOR CURRENT
IC
VBEsat
——
IC
(mA)
IC
-2
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BDTIC
-0.1
Ta=100℃
-1
Ta=25℃
Ta=100℃
Ta=25℃
β=10
β=10
-0.01
-0.3
-1
-10
COLLECTOR CURRENT
IC
IC
-0.1
-800
-100
-1
(mA)
—— VBE
fT
1000
-800
(mA)
IC
——
(MHz)
TRANSITION FREQUENCY
T=
a 25
℃
℃
T=
a 10
0
-10
-1
COMMON EMITTER
VCE=-1V
-0.1
-0.0
100
COMMON EMITTER
VCE=-5V
Ta=25℃
10
-0.3
-0.6
-0.9
-1.2
-5
-10
BASE-EMMITER VOLTAGE VBE (V)
100
Cob/ Cib
—— VCB/ VEB
COLLECTOR POWER DISSIPATION
PC (mW)
(pF)
C
Cob
-1
VR
(V)
(mA)
Ta
500
400
300
200
100
0
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
——
IC
600
10
1
-0.1
PC
700
Ta=25 ℃
Cib
-100
COLLECTOR CURRENT
f=1MHz
IE=0/IC=0
CAPACITANCE
IC
fT
-100
IC
(mA)
-100
COLLECTOR CURRENT
-800
COLLECTOR CURRENT
-10
-20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Feb,2012