Download SOT-223 Plastic-Encapsulate Transistors B772

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
B772
TRANSISTOR（PNP）
SOT-223
FEATURES
Power Dissipation:1.25W
Low Collector-emitter Saturation Voltage
1. BASE
2. COLLECTOR
3. EMITTER
BDTIC
MAXIMUM RATINGS(Ta=25 ℃ unless otherwise not)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-3
A
PC
Collector Dissipation
1.25
W
RӨJA
Thermal Resistance from Junction to Ambient
100
℃/W
TJ
Junction Temperature
150
Я
Tstg
Storage Temperature
-55~+150
Я
ELECTRICAL CHARACTERISTICS（Ta =25℃　unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=-100μA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,
=
IB 0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100 μAIC=0
-6
V
Collector cut-off current
ICBO
VCB=
=-40 V, IE 0
-1
μA
Collector cut-off current
ICEO
VCE
=
=-30 V IB 0
-10
μA
Emitter cut-off current
IEBO
=
VEB= -6V,IC 0
-1
μA
hFE（1）
VCE=2V,IC=-1A
60
hFE（2）
VCE=-2V,IC=-100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC= -2A,IB=-0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -2A,IB=-0.2A
-1.5
V
DC current gain
Transition frequency
VCE= -5V,IC=-0.1A
fT
400
50
f=10MHz
MHz
CLASSIFICATION of hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
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%,1RY201
B772
Typical Characteristics
Static Characteristic
COLLECTOR CURRENT
IC
-2.0
-9mA
-8mA
-7mA
-6mA
DC CURRENT GAIN
(A)
-10mA
-5mA
-1.5
-4mA
-3mA
-1.0
hFE
3000
COMMON
EMITTER
Ta=25 ℃
hFE
-2.5
——
IC
COMMON EMITTER
VCE= -2V
1000
Ta=100℃
o
Ta=25 C
100
-2mA
-0.5
IB=-1mA
-0.0
10
-0
-3
-6
COLLECTOR-EMITTER VOLTAGE
VCEsat ——
-1000
-9
VCE
-1
-10
(V)
-100
-3000
-1000
COLLECTOR CURRENT
IC
(mA)
VBEsat —— I
C
IC
-3000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=100℃
Ta=25℃
-10
Ta=100℃
-100
β=10
-1
-1
-10
-100
COLLECTOR CURRENT
VBE ——
IC
COLLECTOR CURRENT
IC
Cob / Cib
1000
——
-3000
- 1000
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
-1000
o
(pF)
Ta=25 C
C
Cib
T =2 o
5 C
a
CAPACITANCE
-100
T =1 o
00 C
a
IC (mA)
- 100
- 10
(mA)
-3000
COLLECTOR CURRENT
β=10
-10
- 1
-3000
-1000
Ta=25℃
-1000
-10
100
Cob
COMMON EMITTER
VCE= -2V
10
-0.1
-1
-0
-200
-400
-600
-800
BASE-EMITTER VOLTAGE
fT
——
-1200
IC
Pc
1.50
COLLECTOR POWER DISSIPATION
Pc (W)
fT
TRANSITION FREQUENCY
-1
-10
REVERSE VOLTAGE
VBE(mV)
(MHz)
500
-1000
100
10
VCE=-5V
——
V
-20
(V)
Ta
1.25
1.00
0.75
0.50
0.25
o
Ta=25 C
1
-5
0.00
-10
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COLLECTOR CURRENT
-100
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
(℃ )
150
B,Nov,2013