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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
B772S
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Low speed switching
2. COLLECTOR
3 BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-3
A
PC
Collector Power Dissipation
0.625
W
RӨJA
Thermal Resistance, junction to Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA ,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40V, IE=0
-1
μA
Collector cut-off current
ICEO
VCE=-30V, IB=0
-10
μA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-1
μA
DC current gain
hFE
VCE= -2V, IC= -1A
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
-1.5
V
Transition frequency
60
VCE= -5V, IC=-0.1A
fT
50
f =10MHz
400
80
MHz
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
(A)
IC
COLLECTOR CURRENT
COMMON
EMITTER
Ta=25 ℃
——
-5mA
-1.2
-4mA
-3mA
-0.8
IC
Ta=100℃
hFE
-10mA
-9mA
-8mA
-7mA
-6mA
-1.6
hFE
1000
Ta=25℃
DC CURRENT GAIN
-2.0
B772S
-2mA
100
IB=-1mA
-0.4
COMMON EMITTER
VCE= -2V
-0.0
-0
-6
-12
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
10
-10
-18
-100
VCE (V)
IC
VBEsat ——
-2000
-3000
-1000
COLLECTOR CURRENT
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=100 ℃
Ta=25℃
-10
-1000
Ta=25℃
Ta=100 ℃
β=10
β=10
-1
-100
-1
-10
-100
COLLECTOR CURREMT
IC
-3000
——
-1000
IC
-10
Cob/Cib
VBE
IC
VCB/VEB
f=1MHz
IE=0/IC=0
Ta=25 ℃
T=
a 1
00
℃
C
IC
(pF)
(mA)
-3000
(mA)
Cib
CAPACITANCE
-10
-300
Cob
100
T=
a 25
℃
-100
-0
-600
-900
10
-0.1
-1200
-1
fT
——
-10
REVERSE VOLTAGE
REVERSE VOLTAGE VBE (mV)
IC
PC
750
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
500
fT
——
-1000
500
-1
TRANSITION FREQUENCY
-100
COLLECTOR CURREMT
(mA)
COMMON EMITTER
VCE= -2V
-1000
COLLECTOR CURRENT
-1
-3000
100
10
——
V
-20
(V)
Ta
625
500
375
250
125
VCE=-5V
o
Ta=25 C
1
-5
0
-10
www.BDTIC.com/jcst
COLLECTOR CURRENT
-100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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