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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 B772S TRANSISTOR (PNP) 1. EMITTER FEATURES Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit BDTIC VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.625 W RӨJA Thermal Resistance, junction to Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency 60 VCE= -5V, IC=-0.1A fT 50 f =10MHz 400 80 MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.BDTIC.com/jcst Typical Characteristics Static Characteristic (A) IC COLLECTOR CURRENT COMMON EMITTER Ta=25 ℃ —— -5mA -1.2 -4mA -3mA -0.8 IC Ta=100℃ hFE -10mA -9mA -8mA -7mA -6mA -1.6 hFE 1000 Ta=25℃ DC CURRENT GAIN -2.0 B772S -2mA 100 IB=-1mA -0.4 COMMON EMITTER VCE= -2V -0.0 -0 -6 -12 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— 10 -10 -18 -100 VCE (V) IC VBEsat —— -2000 -3000 -1000 COLLECTOR CURRENT IC (mA) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BDTIC -100 Ta=100 ℃ Ta=25℃ -10 -1000 Ta=25℃ Ta=100 ℃ β=10 β=10 -1 -100 -1 -10 -100 COLLECTOR CURREMT IC -3000 —— -1000 IC -10 Cob/Cib VBE IC VCB/VEB f=1MHz IE=0/IC=0 Ta=25 ℃ T= a 1 00 ℃ C IC (pF) (mA) -3000 (mA) Cib CAPACITANCE -10 -300 Cob 100 T= a 25 ℃ -100 -0 -600 -900 10 -0.1 -1200 -1 fT —— -10 REVERSE VOLTAGE REVERSE VOLTAGE VBE (mV) IC PC 750 COLLECTOR POWER DISSIPATION PC (mW) (MHz) 500 fT —— -1000 500 -1 TRANSITION FREQUENCY -100 COLLECTOR CURREMT (mA) COMMON EMITTER VCE= -2V -1000 COLLECTOR CURRENT -1 -3000 100 10 —— V -20 (V) Ta 625 500 375 250 125 VCE=-5V o Ta=25 C 1 -5 0 -10 www.BDTIC.com/jcst COLLECTOR CURRENT -100 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150