Download TO-92 Plastic-Encapsulate Transistors A94

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
A94
TRANSISTOR (PNP)
1.EMITTER
2.BASE
FEATURES
z High Breakdown Voltage
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current&RQWLQXRXV
A
IC0
Collector Current3XOVHG
-0
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance Irom Junction Wo $mbient 200 ℃/W
RθJA
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-400V,IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-400V,IB=0
-5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1
μA
hFE(1)
VCE=-10V, IC=-10mA
80
hFE(2)
VCE=-10V, IC=-1mA
70
hFE(3)
VCE=-10V, IC=-100mA
60
hFE(4)
VCE=-10V, IC=-50mA
80
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)(1)
IC=-10mA,IB=-1mA
-0.2
V
VCE(sat)(2)
IC=-50mA,IB=-5mA
-0.3
V
VBE(sat)
IC=-10mA,IB=-1mA
-0.75
V
fT
Transition frequency
300
VCE=-20V, IC=-10mA,f=30MHz
50
MHz
CLASSIFICATION OF hFE(1)
RANK
A
B1
B2
C
RANGE
80-100
100-150
150-200
200-300
www.BDTIC.com/jcst
Typical Characteristics
IC
-18
18
hFE
1000
——
IC
COMMON EMITTER
Ta=25℃
-100uA
100uA
-16
16
COMMON EMITTER
VCE= -10V
-80uA
80uA
-70uA
70uA
-60uA
60uA
-10
10
Ta=100℃
hFE
-12
12
DC CURRENT GAIN
(mA)
IC
-90uA
90uA
-14
14
COLLECTOR CURRENT
VCE
——
A94
-50uA
50uA
-8
8
-40uA
40uA
-6
6
-30uA
30uA
-4
4
Ta=25℃
100
-20uA
20uA
-2
2
IB=-10uA
-0
0
10
-0
-2
-4
-6
-8
-10
-12
-14
-16
COLLECTOR-EMITTER VOLTAGE
VCEsat
-10
——
-18
-20
-22
-1
-10
-100
COLLECTOR CURRENT
VCE (V)
IC
VBEsat ——
-1000
IC
-200
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BDTIC
-1
Ta=100 ℃
-0.1
-500
Ta=100 ℃
Ta=25℃
β=10
-0.01
-1
-10
-100
COLLECTOR CURRENT
IC
——
IC
β=10
-200
-200
-1
-10
(mA)
VBE
fT
100
——
IC
-200
(mA)
IC
50
TRANSITION FREQUENCY
-10
T =2
5℃
a
T =1
00℃
a
IC
fT
(mA)
(MHz)
-100
COMMON EMITTER
VCE=-10V
COMMON EMITTER
VCE= -20V
Ta=25℃
10
-1
-0
-300
-600
-900
-1200
-10
-5
BASE-EMMITER VOLTAGE VBE (mV)
300
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
CT
Cob
10
1
-0.1
——
IC
(mA)
Ta
600
Ta=25 ℃
Cib
PC
700
(pF)
100
-100
COLLECTOR CURRENT
f=1MHz
IE=0/IC=0
CAPACITANCE
-100
COLLECTOR CURRENT
-200
COLLECTOR CURRENT
Ta=25℃
500
400
300
200
100
0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-20
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
(℃ )
150
Related documents