Download SOT-89-3L Plastic-Encapsulate Transistors A42

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
A42
TRANSISTOR (NPN)
1. BASE
FEATURES
z Low Collector-Emitter Saturation Voltage
z High Breakdown Voltage
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
310
V
VCEO
Collector-Emitter Voltage
305
V
VEBO
Emitter-Base Voltage
5
V
Collector Current -Continuous
200
mA
Collector Current -Pulsed
500
mA
BDTIC
IC
ICM
PC
Collector Power Dissipation
500
mW
Thermal Resistance from Junction to Ambient
250
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
310
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
305
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
5
V
ICBO
VCB=200V,IE=0
0.25
µA
VCE=200V,IB=0
0.25
µA
VCE=300V,IB=0
5
µA
0.1
µA
Collector cut-off current
ICEO
Emitter cut-off current
DC current gain
IEBO
VEB=5V,IC=0
hFE(1)
VCE=10V, IC=1mA
60
hFE(2)
VCE=10V, IC=10mA
100
hFE(3)
VCE=10V, IC=30mA
75
300
Collector-emitter saturation voltage
VCE(sat)
IC=20mA,IB=2mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC=20mA,IB=2mA
0.9
V
Transition frequency
fT
VCE=20V,IC=10mA, f=30MHz
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50
MHz
Typical Characteristics
IC
18
VCE
——
——
IC
COMMON
EMITTER
Ta=25℃
hFE
80uA
70uA
DC CURRENT GAIN
(mA)
IC
12
COLLECTOR CURRENT
14
hFE
1000
90uA
16
A42
60uA
50uA
10
40uA
8
30uA
6
Ta=100℃
Ta=25℃
100
20uA
4
IB=10uA
COMMON EMITTER
VCE=10V
2
10
0.1
0
0
2
4
6
8
10
12
14
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
18
20
22
10
100
COLLECTOR CURRENT
IC
500
1
VCE (V)
VBEsat ——
900
IC
200
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
Ta=100 ℃
100
Ta=25℃
Ta=25℃
600
Ta=100 ℃
β=10
β=10
10
0.1
1
10
COLLECTOR CURREMT
IC
——
VBE
fT
300
——
IC
100
(mA)
IC
fT
1
300
600
900
COMMON EMITTER
VCE=20V
Ta=25℃
0.1
0
100
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
10
COMMON EMITTER
VCE=10V
10
0.1
1200
1
100
Cob/Cib
——
VCB/VEB
PC
600
COLLECTOR POWER DISSIPATION
PC (mW)
f=1MHz
IE=0/IC=0
Ta=25 ℃
C
(pF)
Cib
10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
CAPACITANCE
10
COLLECTOR CURREMT
(mA)
(mA)
IC
COLLECTOR CURRENT
1
(MHz)
100
IC
300
0.1
100
10
Cob
——
IC
100
(mA)
Ta
500
400
300
200
100
1
0.1
1
0
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REVERSE VOLTAGE
10
V
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150