Download TO-92 Plastic-Encapsulate Transistors A44

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A44
TO – 92
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z High Breakdown Voltage
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
Collector Current -Continuous
0.2
A
ICM
Collector Current -Pulsed
0.3
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance from Junction to Ambient
200
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
IC
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
T est
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=400V,IE=0
Collector cut-off current
ICEO
VCE=400V,IB=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
hFE(1)
VCE=10V, IC=10mA
80
hFE(2)
VCE=10V, IC=1mA
70
hFE(3)
VCE=10V, IC=100mA
40
hFE(4)
VCE=10V, IC=50mA
80
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.1
μA
5
μA
0.1
μA
300
VCE(sat)(1)
IC=10mA,IB=1mA
0.2
V
VCE(sat)(2)
IC=50mA,IB=5mA
0.3
V
VBE(sat)
IC=10mA,IB=1mA
0.75
V
fT
VCE=20V, IC=10mA,f=30MHz
50
MHz
CLASSIFICATION OF hFE(1)
RANK
A
B1
B2
C
RANGE
80-100
100-150
150-200
200-300
D,May,2012
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
15
(mA)
72uA
IC
DC CURRENT GAIN
COLLECTOR CURRENT
56uA
10
48uA
40uA
32uA
5
COMMON EMITTER
VCE= 10V
hFE
64uA
hFE —— IC
1000
COMMON
EMITTER
Ta=25℃
80uA
A44
Ta=100℃
Ta=25℃
100
24uA
16uA
IB=8uA
0
10
0
5
10
15
20
COLLECTOR-EMITTER VOLTAGE
VCE
25
1
VBEsat —— I
C
1.0
10
VCEsat ——
200
200
100
COLLECTOR CURRENT
(V)
IC
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
0.8
Ta=25℃
0.6
Ta=100℃
0.4
0.2
1
10
100
COLLECTOR CURRENT
Cob / Cib
1000
——
IC
——
200
(A)
IC
Ta=25℃
TRANSITION FREQUENCY
fT
REVERSE VOLTAGE
COLLECTOR POWER DISSIPATION
PC (mW)
100
IC
VCE=20V
10
——
10
fT
100
3
PC
1
VCB / VEB
Cob
750
Ta=25℃
50
COLLECTOR CURRENT
Cib
1
Ta=100℃
(MHz)
(pF)
C
CAPACITANCE
1
100
(A)
Ta=25℃
10
150
0
200
f=1MHz
IE=0 / IC=0
100
β=10
V
(V)
30
10
1
10
COLLECTOR CURRENT
100
IC
(mA)
Ta
625
500
375
250
125
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
D,May,2012