Download TO-92 Plastic-Encapsulate Transistors A1015

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A1015
TO-92
TRANSISTOR (PNP)
1.EMITTER
FEATURES
z
Power dissipation
2.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
3.BASE
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-150
mA
PD
Collector Power Dissipation
400
mW
RθJA
Thermal Resistance from Junction to
Ambient
312
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -0.1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -50V,IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE= -50V, IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
DC current gain
hFE
VCE= -6V, IC= -2mA
70
400
Collector-emitter saturation voltage
VCE(sat)
IC= -100mA, IB= -10mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC= -100mA, IB= -10mA
-1.1
V
Transition frequency
Collector Rutput Fapacitance
Noise Iigure
fT
VCE= -10 V, IC= -1mA
f =30MHz
Cob
VCB=-10V,IE=0,f=1MHz
7
pF
VCE= -6 V, IC= -0.1mA,
f =1kHz,RG=10kΩ
6
dB
NF
80
MHz
CLASSIFICATION OF hFE
Rank
Range
O
Y
GR
70-140
120-240
200-400
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
-3.6
COMMON
EMITTER
Ta=25℃
-7uA
-6uA
-5uA
-1.8
IC
300
-8uA
-2.4
——
Ta=100℃
hFE
-9uA
-3.0
DC CURRENT GAIN
(mA)
IC
hFE
500
-10uA
COLLECTOR CURRENT
A1015
-4uA
-1.2
-3uA
Ta=25℃
100
30
-2uA
COMMON EMITTER
—— VCE=-6V
-0.6
IB=-1uA
....... VCE=-1V
-0.0
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1
——
10
-0.2
-12
-0.5
-3
-1
VCE (V)
IC
VBEsat
-3
-30
-10
COLLECTOR CURRENT
IC
-100 -150
(mA)
IC
——
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=10
-0.3
-0.1
Ta=100℃
Ta=25℃
-0.03
-0.01
-0.3
-3
-1
COLLECTOR CURRENT
IC
——
Ta=25℃
Ta=100℃
-0.3
-0.5
-1
(mA)
-10
-3
COLLECTOR CURRENT
VBE
Cob/ Cib
30
(mA)
—— VCB/ VEB
f=1MHz
IE=0/ IC=0
COMMON EMITTER
VCE= -6V
Ta=25℃
(pF)
IC
CAPACITANCE
5℃
Ta=
2
-1
-400
-500
Cib
10
C
00 ℃
Ta=
1
COLLECTOR CURRENT
-10
-0.1
-300
-600
-700
-800
Cob
3
1
-0.2
-900
-0.5
BASE-EMMITER VOLTAGE VBE (mV)
fT
——
IC
PC
500
——
-10
V
-20
(V)
Ta
COMMON EMITTER
VCE=-10V
Ta=25℃
COLLECTOR POWER DISSIPATION
PC (mW)
TRANSTION FREQUENCY
-3
-1
REVERSE VOLTAGE
300
fT
(MHz)
1000
-100 -150
-30
IC
(mA)
-150
-100
IC
-1
-0.1
-0.2
-100 -150
-30
-10
β=10
100
30
10
-0.4
-1
-3
400
300
200
100
0
www.BDTIC.com/jcst
-30
-10
COLLECTOR CURRENT
IC
(mA)
-100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
D,Oct,2013