Download TO-92 Plastic-Encapsulate Transistors 8550SS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
8550SS
TRANSISTOR (PNP)
1.EMITTER
FEATURES
z General Purpose Switching and Amplification.
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
-1.5
A
1
W
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-0.1mA,IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V,IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-20V,IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE(1)
VCE=-1, IC=-100mA
85
hFE(2)
VCE=-1V, IC=-800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-800mA,IB=-80mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-800mA,IB=-80mA
-1.2
V
DC current gain
fT
Transition frequency
VCE=-10V,IC=-50mA,f=30MHz
300
100
MHz
CLASSIFICATION OF hFE(1)
RANK
B
C
D
RANGE
85-160
120-200
160-300
B,Jan,2012
www.BDTIC.com/jcst
8550SS
Typical Characteristics
Static Characteristic
-0.25
hFE
- 0.9mA
-0.8mA
-0.20
-0.7mA
-0.6mA
-0.15
——
COMMON
EMITTER
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
1000
-1mA
IC
(A)
-0.30
-0.5mA
-0.4mA
-0.10
IC
Ta=100℃
300
Ta=25℃
100
-0.3mA
-0.2mA
-0.05
COMMON EMITTER
VCE= -1V
IB=-0.1mA
-0.00
10
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
-6
-7
-1
-10
VCE (V)
-100
COLLECTOR CURRENT
IC
VBEsat ——
-1200
-1000 -1500
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-1000
-100
Ta=100 ℃
Ta=25℃
-10
-800
Ta=25℃
-600
Ta=100 ℃
-400
β=10
-1
-1
-10
-100
COLLECTOR CURREMT
IC
-1500
——
IC
β=10
-1000 -1500
-1
-10
COLLECTOR CURREMT
(mA)
VBE
-100
Cob/Cib
100
——
IC
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
-1000
Ta=25 ℃
Cob
C
CAPACITANCE
T=
a 25
℃
T=
a 10
0℃
COLLECTOR CURRENT
IC
(pF)
(mA)
Cib
-100
-1000 -1500
-10
10
COMMON EMITTER
VCE= -1V
1
-0.1
-1
-0
-300
-600
-900
-1200
-1
BESE-EMMITER VOLTAGE VBE (mV)
IC
fT
TRANSITION FREQUENCY
200
COMMON EMITTER
VCE=-10V
Ta=25℃
100
-5
-10
PC
1.2
(MHz)
——
COLLECTOR POWER DISSIPATION
PC (W)
fT
300
(mA)
-20
(V)
Ta
0.8
0.6
0.4
0.2
-30
-100
IC
——
V
1.0
0.0
www.BDTIC.com/jcst
-30
COLLECTOR CURRENT
-10
REVERSE VOLTAGE
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
125
150
B,Jan,2012