Download TO-3P Plastic-Encapsulate Transistors 3DA5200B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
3DA5200B
TO – 3P
TRANSISTOR (NPN)
1. BASE
FEATURES
z High Breakdown Voltage
z High Current and Power Capacity
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
15
A
PC
Collector Power Dissipation
3
W
Thermal Resistance From Junction To Ambient
42
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=50mA,IB=0
160
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
5
V
ICBO
VCB=160V,IE=0
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
VEB=5V,IC=0
hFE(1)
VCE=5V, IC=1A
55
hFE(2)
VCE=5V, IC=7A
35
VCE(sat)
5
μA
5
μA
160
IC=8A,IB=800mA
3
V
1.5
V
Base-emitter voltage
VBE
VCE=5V, IC=7A
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
360
pF
VCE=5V,IC=1A
30
MHz
fT
Transition frequency
CLASSIFICATION OF hFE (1)
RANK
R
O
RANGE
55-110
80-160
A,Dec,2010
www.BDTIC.com/jcst