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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
3CG751
TO-92MOD
TRANSISTOR (PNP)
FEATURE
y High power amplifier
y Low VCE(sat)
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-1.5
A
PC
Collector Power Dissipation
0.9
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100µA, IE=0
-30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1 mA ,
IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA , IC=0
-5
V
Collector cut-off current
ICBO
VCB= -30 V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
µA
DC current gain
hFE
VCE=-2 V, IC= -500mA
Collector-emitter saturation voltage
VCE(sat)
IC= -1.5 A, IB= -30mA
Transition frequency
Collector output capacitance
fT
VCE= -5V, IC= -100mA
Cob
VCB=-10V,IE=0,f=1MHz
100
400
-2
50
MHz
80
CLASSIFICATION OF hFE
Rank
Range
O
Y
100-240
150-400
www.BDTIC.com/jcst
V
pF
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