Download TO-92 Plastic-Encapsulate Transistors 2SD879

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SD879
TO-92
TRANSISTOR (NPN)
FEATURES
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In Applications Where Two NiCd Batteries are Used to rovide
2.4V, two 2SD879s are used.
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The charge time is approximately 1 second faster Than that of
germanium transistors.
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Less power dissipation because of low Collector-to-Emitter
Voltage VCE(sat), permitting more flashes of light to be emitted.
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Small package and large allowable collector dissipation (TO-92,
PC=750mW).
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Large current capacity and highly resistant to break-down.
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Excellent linearity of hFE in the region from low current to high
current. Power amplifier applications
1. EMITTER
2. COLLECTOR
3. BASE
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VCEX
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
Unit
30
V
10
V
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
3
A
Collector Power Dissipation
750
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Collector-base breakdown voltage
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=10µA , IE=0
30
V
V(BR)CEX
IC=1mA , VBE=3V
20
V
V(BR)CEO
IC=10mA, IB=0
10
V
V(BR)EBO
IE=10µA, IC=0
6
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
ICBO
VCB=20V ,
IE=0
1
µA
Emitter cut-off current
IEBO
VEB=4V ,
IC=0
1
µA
DC current gain
hFE*
VCE=2V,
0.4
V
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
*
*
VCE(sat)
fT
Cob
IC=3A
140
IC=3A, IB=60mA
VCE=10V, IC=50mA
200
MHz
VCB=10V,f=1MHz
30
pF
PULSE TEST
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