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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SD669
2SD669A
TO- 126C
TRANSISTOR (NPN)
FEATURES
Low Frequency Power Amplifier Complementary Pair
with 2SB649/A
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
BDTIC
Symbol
Parameter
VCBO
Collector- Base Voltage
VCEO
Collector-Emitter Voltage
180
V
2SD669A
160
IC
Collector Current -Continuous
Tstg
Unit
120
Emitter-Base Voltage
TJ
Value
2SD669
VEBO
PC
1. EMITTER
V
5
V
1.5
A
Collector Dissipation
1
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC=1mA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
conditions
Min
Typ
Max
180
IC=10mA, IB=0
2DS669
120
2SD669A
160
IE=1mA, IC=0
5
Unit
V
V
V
Collector cut-off current
ICBO
VCB=160V, IE=0
10
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
10
µA
hFE(1)
VCE=5V, IC=150mA
DC current gain
hFE(2)
VCE(sat)
Collector-emitter saturation voltage
2SD669
60
320
2SD669A
60
200
VCE=5V, IC=500mA
30
IC=500mA, IB=50mA
1
V
1.5
V
Base-emitter voltage
VBE
VCE=5V, IC=150mA
Transition frequency
fT
VCE=5V, IC=150mA
140
MHz
VCB=10V, IE=0, f=1MHz
14
pF
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
hFE(1)
B
C
D
2SD669
60-120
100-200
160-320
2SD669A
60-120
100-200
www.BDTIC.com/jcst
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