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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD669AL
TO – 126
TRANSISTOR (NPN)
FEATURES
z Low Frequency Power Amplifier
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
170
V
VEBO
Emitter-Base Voltage
6.5
V
BDTIC
IC
Collector Current
1
A
PC
Collector Power Dissipation
1
W
125
℃/W
Thermal Resistance from Junction to Ambient
RθJA
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
200
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
170
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA,IC=0
6.5
V
Collector cut-off current
ICBO
VCB=195V,IE=0
1
μA
Collector cut-off current
ICEO
VCE=165V,IB=0
2
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=5V, IC=0.15A
100
hFE(2)
VCE=5V, IC=500mA
33
DC current gain
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Collector output capacitance
Cob
fT
Transition frequency
320
IC=0.5A,IB=0.05A
VCE=5V, IC=0.15A
0.9
V
1.4
V
VCB=10V,IE=0, f=1MHz
14
pF
VCE=5V,IC=150mA
140
MHz
CLASSIFICATION of hFE(1)
RANK
C
D
RANGE
100-200
160-320
A-,Sep,2013
www.BDTIC.com/jcst
2SD669AL
Typical Characteristics
Static Characteristic
2mA
hFE
(mA)
IC
COLLECTOR CURRENT
VCE= 5V
COMMON
EMITTER
Ta=25℃
1.8mA
1.6mA
1.4mA
200
hFE —— IC
1000
DC CURRENT GAIN
300
1.2mA
1.0mA
0.8mA
100
0.6mA
o
Ta=100 C
100
o
Ta=25 C
0.4mA
IB=0.2mA
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VCE
7
10
10
8
VBEsat —— IC
1200
100
COLLECTOR CURRENT
(V)
VCEsat ——
500
IC
1000
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
800
Ta=25℃
600
400
Ta=100℃
β=10
400
300
200
Ta=100℃
100
200
Ta=25℃
0
0
1
10
100
COLLECTOR CURRENT
IC ——
IC
1000
1
10
(mA)
100
COLLECTOR CURRENT
VBE
1000
Pc
1.5
——
IC
1000
(mA)
Ta
IC (mA)
COLLECTOR POWER DISSIPATION
Pc (W)
VCE=5V
COLLECTOR CURRENT
100
o
Ta=100 C
Ta=25℃
10
1
0.2
0.4
0.6
BASE-EMITTER VOLTAGE
0.8
VBE(V)
1.0
1.0
0.5
0.0
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
Ta
125
150
(℃ )
A-2,Sep,2013
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