Download SOT-23 Plastic-Encapsulate Transistors 2SD596

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD596
SOT-23
TRANSISTOR (NPN)
FEATURES
z
High DC Current gain.
z
Complimentary to 2SB624
1.BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
700
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
Min
Typ
Max
Unit
30
V
IC= 1mA, IB=0
25
V
V(BR)EBO
IE= 100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=30V , IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
μA
IE=0
hFE(1)*
VCE= 1V, IC= 100mA
110
hFE(2)*
VCE=1V, IC= 700mA
50
Collector-emitter saturation voltage
VCE(sat) *
IC=700mA, IB=70mA
Base-emitter voltage
VBE *
VCE=6V, IC=10mA
0.6
VCE=6V, IC= 10mA
170
DC current gain
fT
Transition frequency
VCB=6V,IE=0,f=10MHZ
Cob
Collector Output Capacitance
400
0.6
V
0.7
V
MHz
12
pF
* Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
CLASSIFICATION OF hFE(1)
Marking
Range
DV1
DV2
DV3
DV4
DV5
110-180
135-220
170-270
200-320
250-400
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Typical Characteristics
Static Characteristic
180
COMMON
EMITTER
Ta=25℃
450uA
500
DC CURRENT GAIN
400uA
350uA
100
300uA
80
250uA
200uA
60
40
COMMON EMITTER
VCE= 1V
550
hFE
(mA)
IC
120
COLLECTOR CURRENT
140
hFE —— IC
600
500uA
160
2SD596
o
Ta=100 C
450
400
350
300
250
o
Ta=25 C
200
150uA
150
100uA
100
20
50
IB=50uA
0
0.0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE
VCE
2.5
1
VBEsat —— IC
1.2
10
COLLECTOR CURRENT
(V)
VCEsat ——
350
IC
100
700
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
1.0
0.8
Ta=25℃
0.6
0.4
Ta=100℃
0.2
1
10
100
COLLECTOR CURRENT
fT
——
IC
150
100
Ta=100℃
Ta=25℃
1
(mA)
10
Cob / Cib
IC
——
IC
(mA)
VCB / VEB
COMMON EMITTER
VCE=6V
250
700
100
COLLECTOR CURRENT
f=1MHz
IE=0 / IC=0
o
Ta=25 C
o
Ta=25 C
(pF)
100
Cib
C
200
CAPACITANCE
TRANSITION FREQUENCY
200
0
0.1
700
fT
(MHz)
300
150
100
10
Cob
50
0
1
10
1
0.1
100
COLLECTOR CURRENT
IC
1
10
REVERSE VOLTAGE
(mA)
IC —— VBE
Pc
250
COLLECTOR POWER DISSIPATION
Pc (mW)
700
IC (mA)
250
50
0.0
0.1
100
o
COLLECTOR CURRENT
β=10
300
Ta=100 C
10
Ta=25℃
1
——
V
20
(V)
Ta
200
150
100
50
COMMON EMITTER
VCE=6V
0.1
0.2
0
0.3
0.4
0.5
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0.6
0.7
BASE-EMITTER VOLTAGE
0.8
VBE(V)
0.9
1.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150