Download TO-252-2L Plastic-Encapsulate Transistors 2SD2118 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SD2118
TRANSISTOR (NPN)
TO-252-2L
FEATURES
z
Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
z
Excellent DC Current Gain Characteristics.
1.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
5
A
Collector Power Dissipation
1
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
2.COLLECTOR
3.EMITTER
BDTIC
ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
=
V(BR)CBO IC=50µA,IE 0 50
V
Collector-emitter breakdown voltage
=
V(BR)CEO IC =1mA,IB 0 20
V
Emitter-base breakdown voltage
=
V(BR)EBO IE=50µA,IC 0 6
V
Collector cut-off current
=
VCB=40V,IE 0
ICBO
=
VEB=5V,IC 0
IEBO
Emitter cut-off current
hFE
DC current gain
Collector-emitter saturation voltage
CLASSIFIC ATION OF h
Rank
Range
VCB=20V,I
=
=
E 0,f 1MHz
0.5
µA
1
150
30
V
MHz
pF
FE
Q
R
120-270
180- 390
www.BDTIC.com/jcst
µA
390
=
VCE=6V,I
=
C 50mA,f 100MHz
Cob
Collector output capacitance
120
=
IC=4A,IB 100mA
VCE(sat)
fT
Transition frequency
VCE=2V,I
=C 0.5A
0.5
Typical Characteristics
hFE
Static Characteristic
600
IC
COMMON EMITTER
VCE=2V
2.0mA
(mA)
Ta=100℃
hFE
1.8mA
1.6mA
400
DC CURRENT GAIN
IC
——
500
COMMON EMITTER
Ta=25℃
COLLECTOR CURRENT
2SD2118
1.4mA
1.2mA
1.0mA
0.8mA
200
0.6mA
300
Ta=25℃
200
0.4mA
IB=0.2mA
0
0.0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
VCE
100
2.5
1
10
100
1000
COLLECTOR CURRENT
(V)
IC
VBEsat
1200
——
IC
5000
(mA)
IC
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=40
100
Ta=100℃
Ta=25℃
1000
800
Ta=25℃
600
Ta=100℃
400
β=40
10
200
1
10
100
1000
COLLECTOR CURRENT
IC
1
5000
100
1000
COLLECTOR CURRENT
(mA)
IC —— VBE
5000
10
Cob/ Cib
1000
IC
—— VCB/ VEB
Ta=25℃
(pF)
Cib
C
Ta=100℃
100
CAPACITANCE
COLLCETOR CURRENT
f=1MHz
IE=0/IC=0
1000
IC
(mA)
COMMON EMITTER
VCE=2V
Ta=25℃
10
1
200
400
600
800
BASE-EMMITER VOLTAGE
1000
VBE
100
Cob
10
0.1
1200
1
10
REVERSE VOLTAGE
(mV)
fT —— IC
PC
1.25
fT
COLLECTOR POWER DISSIPATION
PC (W)
(MHz)
100
TRANSITION FREQUENCY
5000
(mA)
30
COMMON EMITTER
VCE=6V
——
V
20
(V)
Ta
1.00
0.75
0.50
0.25
Ta=25℃
10
0.00
10
www.BDTIC.com/jcst
70
30
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Nov,2011
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