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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S
2SD2470
TRANSISTOR
Plastic-Encapsulate Transistors
TO-92S
(NPN)
1. EMITTER
FEATURES
z
Low Saturation Voltage
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
3. BASE
Value
Unit
VCBO
Collector-Base Voltage
15
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current –Continuous
5
A
Collector Power Dissipation
400
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
BDTIC
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA , IE=0
15
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
10
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, IC=0
8
V
Collector cut-off current
ICBO
VCB=10V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=8V, IC=0
0.5
μA
DC current gain
hFE
VCE=2V, IC=2A
VCE(sat)
IC=3A,IB=0.1A
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
fT
Cob
270
820
0.5
V
VCE=6V, IC=50mA,f=100MHz
170
MHz
VCB=10V,IE=0,f=1MHz
30
pF
www.BDTIC.com/jcst
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