Download TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SD1899-Z
TRANSISTOR (NPN)
TO-251-3L
FEATURES
z High hFE
z Low VCE(sat)
1.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
2.COLLECTOR
Unit
BDTIC
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
3
A
Collector Power Dissipation
1
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
3.EMITTER
ELECTRICAL CHAR ACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =1mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
10
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
10
μA
hFE(1)
VCE=2V,IC=200mA
60
hFE(2)
VCE=2V,IC=600mA
100
hFE(3)
VCE=2V,IC=2A
50
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=1.5A,IB=150mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=1.5A,IB=150mA
1.2
V
Transition frequency
fT
Collector output capacitance
Switching Time
Cob
Turn on Time
ton
Storage Time
tstg
Fall Time
VCE=5V,IC=1.5A
120
MHz
VCB=10V,IE=0,f=1MHz
30
pF
0.5
VCC=10V,IC=1A,IB1=-IB2=-0.1A
2.0
0.5
tf
CLASSIFICATION OF h FE(2)
Rank
Range
M
L
K
100-200
160-320
200-400
www.BDTIC.com/jcst
μs
Typical Characteristics
Static Characteristic
8.1mA
7.2mA
5.4mA
4.5mA
3.6mA
2.7mA
500
IC
Ta=100℃
200
DC CURRENT GAIN
6.3mA
1000
——
COMMON EMITTER
VCE= 2V
9.0mA
COMMON
EMITTER
Ta=25℃
(mA)
IC
COLLECTOR CURRENT
hFE
300
hFE
1500
2SD1899-Z
Ta=25℃
100
1.8mA
IB=0.9mA
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
1200
VBEsat
——
5
VCE
0
0.01
6
0.1
COLLECTOR CURRENT
(V)
IC
VCEsat
1000
IC
——
1
(A)
3
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
1000
Ta=25℃
800
Ta=100℃
600
400
0.01
0.1
1
COLLECTOR CURRENT
1000
Cob / Cib
——
IC
0.01
0.1
1
PC
——
IC
3
(A)
Ta
f=1MHz
IE=0 / IC=0
Ta=25℃
(pF)
C
Ta=25℃
1.2
100
CAPACITANCE
Ta=100℃
COLLECTOR CURRENT
VCB / VEB
Cib
Cob
10
1
0.1
100
10
3
β=10
(A)
COLLECTOR POWER DISSIPATION
PC (W)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
1.0
0.8
0.6
0.4
0.2
0.0
1
10
REVERSE VOLTAGE
V
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
-
Ta
125
(℃ )
150
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