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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD2153
SOT-89-3L
TRANSISTOR (NPN)
1. BASE
FEATURES
 Low saturation voltage
2. COLLECTOR
Excellent DC current gain characteristics

3. EMITTER
MARKING: DN
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector -Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
Continuous Collector Current
2
A
Pulsed Collector Current
3
A
Collector Dissipation
0.5
W
Thermal Resistance from Junction to Ambient
250
℃/ W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
IC
ICP
*
PC
RθJA
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.5
μA
DC current gain
hFE
VCE=6V,IC=500mA
Collector-emitter saturation voltage
*
VCE(sat)
Transition frequency
fT
Collector capacitance
Cob
560
2700
IC=1A,IB=20mA
0.5
V
VCE=10V,IC=10mA,f=100MHz
110
MHz
VCB=10V, IE=0,f=1MHz
22
pF
*Single pulse, PW=10ms
CLASSIFICATION OF hFE
Rank
U
V
W
Range
560~1200
820~1800
1200~2700
www.BDTIC.com/jcst
Typical Characterisitics
2SD2153
5000
COMMON
EMITTER
Ta=25℃
450uA
400uA
Ta=100℃
350uA
600
hFE
300uA
250uA
400
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
500uA
200uA
150uA
100uA
200
—— IC
hFE
Static Characteristic
800
Ta=25℃
1000
COMMON EMITTER
VCE=6V
IB=50uA
0
100
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
VCE
8
1
10
(V)
100
COLLECTOR CURRENT
IC
1000
VBEsat
2000
1000
IC
——
(mA)
IC
2000
Ta=100℃
Ta=25℃
10
β=50
1
1
10
COLLECTOR CURRENT
IC
IC
β=50
1
10
(mA)
100
COLLECTOR CURRENT
—— VBE
2000
Ta=100℃
100
1000 2000
100
Ta=25℃
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
1000
100
Cob/ Cib
1000
1000
IC
—— VCB/ VEB
f=1MHz
IE=0/ IC=0
1000
(pF)
100
Cib
C
CAPACITANCE
100
T=
a 25
℃
T=
a 10
0℃
COLLECTOR CURRENT
IC
(mA)
Ta=25℃
10
Cob
10
COMMON EMITTER
VCE=6V
1
0.0
0.3
0.6
0.9
1
0.1
1.2
1
BASE-EMMITER VOLTAGE VBE (V)
fT
10
REVERSE VOLTAGE
—— IC
Pc
0.6
(MHz)
300
——
V
30
(V)
Ta
COLLECTOR POWER DISSIPATION
Pc (W)
0.5
100
TRANSITION FREQUENCY
fT
2000
(mA)
VCE=10V
o
Ta=25 C
10
5
10
0.4
0.3
0.2
0.1
0.0
www.BDTIC.com/jcst
COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150
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