Download TO-263-2L Plastic-Encapsulate Transistors 2SD2012

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Transistors
2SD2012
TO-263-2L
TRANSISTOR (NPN)
1. BASE
FEATURES
z High DC Current Gain
z Low Saturation Voltage
z High Power Dissipation
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
7
V
IC
Collector Current
3
A
PC
Collector Power Dissipation
2
W
Thermal Resistance From Junction To Ambient
63
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VEBO
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Test
conditions
Min
Typ
Max
Unit
IC=100µA,IE=0
60
V
IC=50mA,IB=0
60
V
7
V
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
100
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
100
μA
hFE(1)
VCE=5V, IC=0.5A
100
hFE(2)
VCE=5V, IC=2A
20
hFE(3)
VCE=5V, IC=3A
60
VCE(sat)
IC=2A,IB=0.2A
1
V
1
V
DC current gain
Collector-emitter saturation voltage
320
Base-emitter voltage
VBE
VCE=5V, IC=0.5A
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
35
pF
VCE=5V,IC=0.5A
3
MHz
Transition frequency
fT
*Pulse test
www.BDTIC.com/jcst
Typical Characterisitics
2SD2012
Static Characteristic
COMMON
EMITTER
Ta=25℃
5mA
hFE
1200
4.5mA
IC
4mA
1000
DC CURRENT GAIN
(mA)
1400
COLLECTOR CURRENT
—— IC
hFE
1000
3.5mA
800
3mA
2.5mA
600
2mA
1.5mA
400
Ta=100℃
Ta=25℃
100
1mA
200
IB=0.5mA
VCE=5V
10
0
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
8
VCE
9
10
1
10
100
COLLECTOR CURRENT
(V)
VBEsat
IC
3000
1000
IC
(mA)
IC
——
BDTIC
2000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
1000
100
℃
100
Ta=
5℃
=2
Ta
10
1
10
100
1000
COLLECTOR CURRENT
VBE
3000
IC
Ta=25℃
0
Ta=10
100
3000
1
10
(mA)
100
—— IC
Cob/ Cib
1000
IC
3000
(mA)
—— VCB/ VEB
Cib
(pF)
100
CAPACITANCE
100
C
Ta
=2
5℃
Ta
=1
00
℃
(mA)
IC
COLLCETOR CURRENT
1000
COLLECTOR CURRENT
1000
10
Cob
10
f=1MHz
IE=0/IC=0
1
0.2
0.3
0.4
0.5
fT
0.6
0.7
VBE
0.8
0.9
1
0.1
1.0
1
(V)
10
REVERSE VOLTAGE
—— IC
PC
2500
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
100
Ta=25℃
VCE=5V
BASE-EMMITER VOLTAGE
TRANSITION FREQUENCY
℃
β=10
β=10
1
1000
10
——
V
20
(V)
Ta
2000
1500
1000
500
VCE=5V
Ta=25℃
1
0
20
500
100
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
Ta
125
(℃)
150
Related documents