Download TO-126 Plastic-Encapsulate Transistors 2SD2136

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD2136
TRANSISTOR (NPN)
TO – 126
FEATURES
z High Forward Current Transfer Ratio hFE Which has
Satisfactory Linearity.
z Low Collector-Emitter Saturation Voltage VCE(sat)
z Allowing Supply with the Radial Taping
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
BDTIC
IC
Collector Current
3
A
PC
Collector Power Dissipation
1.25
W
Thermal Resistance From Junction To Ambient
100
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Test
conditions
Min
Typ
Max
Unit
IC=100µA,IE=0
60
V
IC=30mA,IB=0
60
V
IE= 100µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
200
Collector cut-off current
ICEO
VCE=60V,IB=0
300
μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
1
mA
DC current gain
hFE(1) *
VCE=4V, IC=1A
40
*
VCE=4V, IC=3A
10
hFE(2)
Collector-emitter saturation voltage
*
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
*
μA
250
IC=3A,IB=0.375A
1.2
V
VCE=4V, IC=3A
1.8
V
VCE=5V,IC=0.1A, f=10MHz
30
MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
P
Q
R
RANGE
40-90
70-150
120-250
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Typical Characteristics
2SD2136
Static Characteristic
1.8
hFE
1000
COMMON EMITTER
Ta=25℃
1.6
——
IC
COMMON EMITTER
VCE= 4V
hFE
9mA
8mA
DC CURRENT GAIN
(A)
1.2
COLLECTOR CURRENT
IC
10mA
1.4
7mA
1.0
6mA
0.8
5mA
0.6
4mA
Ta=100℃
Ta=25℃
100
3mA
0.4
2mA
0.2
IB=1mA
0.0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
10
0.4
5
10
100
COLLECTOR CURRENT
VCEsat
IC
1200
1
VCE (V)
——
1000
IC
3000
(mA)
IC
1000
BDTIC
β=8
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=8
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
800
Ta=25℃
600
Ta=100 ℃
400
1
10
100
COLLECTOR CURREMT
IC
3000
℃
25
T a=
10
——
1000
IC
1
3000
10
(mA)
100
1000
COLLECTOR CURRENT
VBE
PC
1.50
——
IC
3000
(mA)
Ta
(mA)
COLLECTOR POWER DISSIPATION
PC (W)
COMMON EMITTER
VCE=4V
1000
10
T=
a 25
℃
100
T=
a 10
0℃
IC
0℃
10
T a=
1
200
COLLECTOR CURRENT
100
1
0.1
0
200
400
600
BASE-EMMITER VOLTAGE VBE (mV)
800
1000
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃ )
150