Download TO-252-2L Plastic-Encapsulate Transistors 2SD1802

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SD1802
TO-252 -2L
TRANSISTOR (NPN)
FEATURES
Adoption of FBET,MBIT Processes
z
Large Current Capacity and Wide ASO
z
Low Collector-to-Emitter Saturation Voltage
z
Fast Switching Speed
1.BASE
z
2.COLLECTOR
3.EMITTER
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
3
A
Collector Power Dissipation
1
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC =10µA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =1mA, IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC =0
6
V
Collector cut-off current
ICBO
VCB=40V, IE=0
1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
1
µA
hFE(1)
VCE=2V, IC=100mA
100
hFE(2)
VCE=2V, IC=3A
35
560
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB=100mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB=100mA
1.2
V
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
VCE=10V, IC=50mA
150
MHz
VCB=10V, IE=0, f=1MHz
25
pF
hFE(1)
R
S
T
U
100-200
140-280
200-400
280-560
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
500
——
IC
COMMON
EMITTER
Ta=25℃
2.7mA
(mA)
hFE
1000
3.0mA
400
COMMON EMITTER
VCE=2V
IC
hFE
2.4mA
DC CURRENT GAIN
2.1mA
COLLECTOR CURRENT
2SD1802
300
1.8mA
1.5mA
200
1.2mA
0.9mA
100
Ta=100℃
Ta=25℃
100
0.6mA
IB=0.3mA
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
10
VCE
10
12
1
10
100
COLLECTOR CURRENT
(V)
IC
1200
VBEsat
——
1000
IC
3000
(mA)
IC
BDTIC
β=20
900
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=20
Ta=25℃
Ta=100℃
600
100
Ta=100℃
Ta=25℃
10
10
100
1000
COLLECTOR CURRENT
IC
3000
——
IC
300
10
3000
(mA)
100
VBE
1000
Cob/ Cib
IC
(mA)
—— VCB/ VEB
f=1MHz
IE=0/ IC=0
1000
(mA)
Ta=25℃
(pF)
C
IC
CAPACITANCE
T =2
5℃
a
T =1
00℃
a
COLLECTOR CURRENT
Cib
100
10
100
Cob
COMMON
EMITTER
VCE=2V
1
0
300
600
900
BASE-EMITTER VOLTAGE
PC
1.2
COLLECTOR POWER DISSIPATION
PC (W)
3000
1000
COLLECTOR CURRENT
——
VBE
1200
10
0.1
1
REVERSE VOLTAGE
(V)
Ta
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
20
Related documents