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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD1761
TO-220F
TRANSISTOR (NPN)
1. BASE
FEATURES
z
Low Collector Saturation Voltage:
Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
z
Excellent Current Characteristics of DC Current Gain.
z
Large Collector Power Dissipation: PC=30W(TC=25℃)
z
Complementary Pair with 2SB1187
2. COLLECTOR
3. EMITTER
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
3
A
Collector Power dissipation
2
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50uA, IE=0
80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50uA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
10
uA
Emitter cut-off current
IEBO
VEB=4V,IC=0
10
uA
DC current gain
hFE(1)
VCE=5V,IC=0.5A
60
320
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=0.2A
1
V
Base-emitter saturation voltage
VBE(sat)
IC=2A,IB=0.2A
1.5
V
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
Rank
Range
VCE=5V,IC=0.5A
8
MHz
VCB=10V,IE=0,f=1MHz
90
pF
hFE(1)
D
E
F
60-120
100-200
160-320
www.BDTIC.com/jcst
Typical Characteristics
2SD1761
Static Characteristic
COMMON EMITTER
Ta=25℃
hFE
5.4mA
0.8
DC CURRENT GAIN
IC
4.8mA
4.2mA
0.6
3.6mA
3.0mA
0.4
——
IC
COMMON EMITTER
VCE= 5V
6.0mA
(A)
1.0
COLLECTOR CURRENT
hFE
1000
1.1
2.4mA
Ta=100℃
Ta=25℃
100
1.8mA
0.2
1.2mA
IB=0.6mA
0.0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1200
10
0.3
6
1
10
VCE (V)
100
COLLECTOR CURRENT
VCEsat
IC
——
1000
IC
3000
(mA)
IC
1000
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
800
600
Ta=25℃
Ta=100 ℃
400
200
0.1
10
IC
3000
100
——
IC
1000
10
1
10
(mA)
100
1000
COLLECTOR CURRENT
VBE
fT
100
——
IC
3000
(mA)
IC
(MHz)
COMMON EMITTER
VCE=5V
fT
T
a
10
TRANSITION FREQUENCY
=1
0
T=
a 25
℃
0℃
100
1
0.1
0
200
400
600
800
10
COMMON EMITTER
VCE=5V
Ta=25℃
1
10
1000
100
200
BASE-EMMITER VOLTAGE VBE (mV)
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (W)
(pF)
Ta=25 ℃
C
1000
Cib
10
0.1
PC
2.5
f=1MHz
IE=0/IC=0
100
300
400
COLLECTOR CURRENT
10000
CAPACITANCE
℃
5℃
=2
Ta
3000
(mA)
IC
COLLECTOR CURRENT
00
=1
Ta
1
1
COLLECTOR CURREMT
1000
100
Cob
——
500
IC
600
700
(mA)
Ta
2.0
1.5
1.0
0.5
0.0
1
www.BDTIC.com/jcst
REVERSE VOLTAGE
10
V
(V)
35
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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