Download TO-220F Plastic-Encapsulate Transistors 2SD1499

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD1499
TRANSISTOR (NPN)
TO-220F
FEATURES
z
Extremely Satisfactory Linearity of the Forward Current
Transfer Ratio hFE
z
Wide Safe Operation Area
z
High Transition Frequency fT
z
Full-pack Package which can be Installed to the Heat Sink with
One Screw.
1. BASE
2. COLLECTOR
3. EMITTER
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
5
A
Collector Power Dissipation
2
W
Junction temperature
150
℃
Storage Temperature
-55to+150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
100
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICEO
VCE=50V,IB=0
50
µA
Collector cut-off current
ICBO
VCB=100V,IE=0
50
µA
Emitter cut-off current
IEBO
VEB=3V,IC=0
50
µA
hFE(1)
VCE=5V,IC=20mA
20
hFE(2)
VCE=5V,IC=1A
60
hFE(3)
VCE=5V,IC=3A
20
VCE(sat)
IC=3A,IB=0.3A
2
V
Base-emitter voltage
VBE
VCE=5V,IC=3A
1.8
V
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
90
pF
VCE = 5 V, IC = 0.5 A, f = 1 MHz
20
MHz
DC current gain
Collector-emitter saturation voltage
Transition frequency
fT
200
CLASSIFICATION OF hFE2
Rank
Range
Q
P
60-120
100-200
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2SD1499
Typical Characteristics
hFE
Static Characteristic
COMMON EMITTER
Ta=25℃
10mA
1.6
8mA
1.2
7mA
1.0
6mA
5mA
0.8
4mA
0.6
3mA
0.4
Ta=100℃
hFE
9mA
1.4
DC CURRENT GAIN
IC
(A)
1.8
COLLECTOR CURRENT
IC
——
1000
2.0
Ta=25℃
100
2mA
0.2
COMMON EMITTER
VCE=5V
IB=1mA
0.0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VCEsat
300
7
VCE
10
1E-3
8
0.01
0.1
1
COLLECTOR CURRENT
(V)
VBEsat
—— IC
IC
5
(A)
—— IC
1200
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
β=10
100
Ta=100℃
Ta=25℃
10
1000
800
Ta=25℃
600
Ta=100℃
400
200
1
10
100
1000
COLLECTOR CURRENT
IC
IC
1
5000
10
100
fT
—— VBE
IC
5000
(mA)
—— IC
40
500
Ta=25℃
Ta=100℃
0.1
200
300
400
500
600
700
BASE-EMMITER VOLTAGE
Pc
TRANSITION FREQUENCY
COLLCETOR CURRENT
IC
fT
(mA)
(MHz)
COMMON EMITTER
VCE=5V
——
VBE
800
900
1000
COMMON EMITTER
VCE=5V
35
o
Ta=25 C
30
25
20
15
10
0.2
0.3
0.4
Ta
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
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75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
0.5
COLLECTOR CURRENT
(mV)
3.0
COLLECTOR POWER DISSIPATION
Pc (W)
1000
COLLECTOR CURRENT
(mA)
150
0.6
IC
0.7
(A)
0.8